Mechanical Behavior Measurement of Electronic Devices by Moiré Interferometry under Thermal Cycle Test

Kishi, Takato; Miki, Kensuke; Koibuchi, Koji

doi:10.1299/jsmea.45.232

Cited by 5 publications

(3 citation statements)

References 4 publications

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“…By choosing different mold types, recently available on the market, the influence of the different chemical bases on the shrinkage and warpage behavior was also investigated. The warpage values were directly derived from TherMoiré measurements, [15][16][17][18][19][20] which is becoming an increasingly valuable method in package development.…”

Section: Introductionmentioning

confidence: 99%

Impact of Reaction Shrinkage on Stress in Semiconductor Packages

Mengel

Mahler

2009

Journal of Elec Materi

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The reliability of a semiconductor package is strongly influenced by the adhesion and temperature behavior of the package encapsulant. This study considers the effect of mold shrinkage during the encapsulation molding process. Four commercially available molds were investigated using warpage and thermomechanical analysis. It could be demonstrated that, for all four types, when molded on a silicon substrate, the temperature at which no stress occurred was in a range of 28-60°C above the molding temperature. This is caused by the shrinkage due to a crosslinking reaction of the mold polymer during the molding process. For a more precise understanding and simulation of the stress behavior inside a molded package, the effect of reaction shrinkage has to be considered.

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Section: Introductionmentioning

confidence: 99%

Impact of Reaction Shrinkage on Stress in Semiconductor Packages

Mengel

Mahler

2009

Journal of Elec Materi

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“…Measuring the warpage of a package during thermal loading is important to confirm any numerical analyses of thermal deformation, but such measurement may not be sufficient to confirm the accuracy of a numerical analysis. Thus, the direct measurement of stress or strain fields in the microstructures of packages were performed using laser Raman spectroscopy [4] and laser interferometry techniques [5]- [7]. Kishi et al [5] and Liu et al [6] measured the displacement in BGA packages using the laser Moiré interferometry.…”

mentioning

confidence: 99%

“…Thus, the direct measurement of stress or strain fields in the microstructures of packages were performed using laser Raman spectroscopy [4] and laser interferometry techniques [5]- [7]. Kishi et al [5] and Liu et al [6] measured the displacement in BGA packages using the laser Moiré interferometry. Mikel et al [7] measured the displacement in a flip chip package also using the laser Moiré interferometry.…”

mentioning

confidence: 99%

Non-linear analyses of strain in flip chip packages improved by the measurement using the digital image correlation method

Ikeda

Kanno

Shishido

et al. 2013

Microelectronics Reliability

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Numerical methods like the finite element (FE) method are often used to evaluate the reliability of electronic packages. However, the accuracy of non-linear numerical analyses should be confirmed by experimental measurements. In this study, we evaluated the strain distribution in flip chip (FC) packages with multi-layered printed circuit boards (PCBs) by combining the digital image correlation method (DICM) and the non-linear FE method, considering the viscoelasticity of resins and the elastoplasticity and creep of solder alloy. Four types of FC package consisting of two types of buildup (BU) resin and two types of underfill (UF) resin were evaluated. The distributions of strain on the cutting sections of FC packages were measured using the DICM with microphotographs obtained by a confocal laser scanning microscope (CLSM). The strain measurements showed that the UF resin with the low coefficient of thermal expansion (CTE) reduced thermal strain around a solder bump, and the BU resin with the low CTE reduced the strain concentration along the interface between a Si chip and a solder bump. We performed the non-linear FE analyses while taking into account the viscoelastic Poisson's ratio of the UF resin and the constant instantaneous Poisson's ratio. The result of the FE analyses with the constant instantaneous Poisson's ratio did not correspond with the strain measurements using the DICM. The normal strain in a solder bump was less than that obtained by the measurement, and the direction of a shear strain band in a solder bump was different from that measured using the DICM. On the other hand, the FE analyses considering the viscoelastic Poisson's ratio showed good agreement with the strain measurements using the DICM. The strain measurement using the DICM improved the accuracy of the non-linear FE analysis of micro electronic packages effectively.

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Creep and creep fracture/damage finite element modelling of engineering materials and structures: an addendum

Mackerle¹

2004

International Journal of Pressure Vessels and Piping

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Mechanical Behavior Measurement of Electronic Devices by Moiré Interferometry under Thermal Cycle Test

Cited by 5 publications

References 4 publications

Impact of Reaction Shrinkage on Stress in Semiconductor Packages

Impact of Reaction Shrinkage on Stress in Semiconductor Packages

Non-linear analyses of strain in flip chip packages improved by the measurement using the digital image correlation method

Creep and creep fracture/damage finite element modelling of engineering materials and structures: an addendum

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