Mechanical characterization and stress engineering of nanocrystalline diamonds films for MEMS applications

Guillén, F.J. Hernández; Janischowsky, K.; Kusterer, J.; Ebert, Wolfgang; Kohn, E.

doi:10.1016/j.diamond.2004.12.061

Cited by 43 publications

(8 citation statements)

References 9 publications

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“…Studies of thin diamond films, grown by chemical vapor deposition, have shown that temperature and methane fraction during growth have the strongest influence on the resulting residual stress 26 and Young's modulus due to the incorporation of impurities and the presence of non‐diamond phases at the grain boundaries 27. For NCD films, grown by CVD, all kinds of residual stress states have been reported: from highly tensile to strong compressive stressed films, depending on the growth method and the choice of parameters 26, 28–32. Also the Young's modulus can be tuned over a wide range, from 400 to 1100 GPa, by changing the methane gas flow and the microwave power density (Table 2).…”

Section: Thin Film Propertiesmentioning

confidence: 99%

Static and dynamic characterization of AlN and nanocrystalline diamond membranes

Knöbber

Zürbig

Heidrich

et al. 2012

Physica Status Solidi (a)

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In this work, AlN and nanocrystalline diamond thin films as well as multi-layer structures on their basis are characterized towards their mechanical properties. In particular, the Young's modulus E and the residual stress s are obtained by wafer bow measurements of thin films as well as by bulge experiments and vibration measurements of freestanding membranes. Depending on the growth conditions, the AlN thin films, deposited by reactive magnetron sputtering, revealed values of s $ þ300 up to þ400 MPa and E $ 370 GPa, while the diamond films, grown by microwave plasma CVD, showed values of s $ À60 to þ60 MPa and E $ 870 up to 1000 GPa. The values and the accuracy of the characterization techniques used are discussed and their limits are demonstrated.

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Section: Thin Film Propertiesmentioning

confidence: 99%

Static and dynamic characterization of AlN and nanocrystalline diamond membranes

Knöbber

Zürbig

Heidrich

et al. 2012

Physica Status Solidi (a)

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“…[1] The small grain size allows the deposition of very smooth diamond films with rms values down to 10 nm. [1,[4][5][6][7] Furthermore, both p-and n-type doped UNCD/ NCD films are available with high carrier concentrations, [3,[8][9][10] a requirement for applications in sensing devices based on electro-chemistry [11][12][13] or MEMS technology. [14,15] Experimentally, it was found that the morphology of the UNCD/NCD films depends strongly on the diamond nucleation density on the substrate material; low nucleation densities result in a surface consisting of an arrangement of separated diamond spheres, whereas each sphere consists of UNCD.…”

Section: Introductionmentioning

confidence: 99%

Modelling the Influence of the Nucleation Density on Ultra Nano Crystalline Diamond Growth Morphology: Preliminary Results

Sternschulte

Rabl

Steinmüller‐Nethl³

et al. 2008

Chemical Vapor Deposition

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The morphology of ultra nanocrystalline diamond (UNCD) films is modeled by a pure geometrical approach. Diamond spheres with a fixed radius are added randomly spread on a smooth substrate surface covered with diamond seeds in varied primary nucleation density. The secondary nucleation rate and the nucleation density on the bare substrate define the distribution of diamond spheres during each cycle. In preliminary results, this simple geometrical model leads to good comparison with published experimental data; low primary nucleation densities yield to the growth of separated diamond islands with a rough surface, the smoothest films are obtained with the highest primary nucleation densities.

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“…At the same time, flat cantilevers are required for most microsensors . Different methods are reported for tailoring the gradient stress within the epitaxial films and thus the cantilever intrinsic bending, such as variation in growth parameters , metallization process , and application of multilayer structures .…”

Section: Gradient Stress Impact On Sic Cantilever Static Behaviormentioning

confidence: 99%

Potential of epitaxial silicon carbide microbeam resonators for chemical sensing

Kermany

Bennett

Valenzuela

et al. 2016

Phys. Status Solidi A

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Epitaxial silicon carbide is promising for chemical resonant sensing applications due to its excellent mechanical, thermal, and biochemical properties. This paper reviews six important aspects of (i) silicon carbide heteroepitaxial growth and residual stress; (ii) silicon carbide beam resonators, resonator types, and fabrication processes; (iii) sensing principles, dynamic sensing mechanical performance, and transduction techniques; (iv) damping parameters; (v) mean stress influence on mass sensitivity of SiC flexural microbridge resonators; and (vi) gradient stress impact on SiC cantilever static behavior. The primary goal is to suggest the means to improve the mass sensitivity parameter and application range of epitaxial silicon carbide microbeam resonators and benchmark it with other relevant materials.

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Mechanical characterization and stress engineering of nanocrystalline diamonds films for MEMS applications

Cited by 43 publications

References 9 publications

Static and dynamic characterization of AlN and nanocrystalline diamond membranes

Static and dynamic characterization of AlN and nanocrystalline diamond membranes

Modelling the Influence of the Nucleation Density on Ultra Nano Crystalline Diamond Growth Morphology: Preliminary Results

Potential of epitaxial silicon carbide microbeam resonators for chemical sensing

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