2010
DOI: 10.1109/jqe.2010.2047245
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Mechanical Construction of Semiconductor Band Gaps

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Cited by 6 publications
(2 citation statements)
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“…Changes in the photoluminescence from such structure would indicate tuning of the electron states. Previous work has shown that mechanical coupling changes between two 200Å quantum wells across a 20nm gap was able to shift the photoluminescence wavelength up to 22nm, with theoretical prediction of larger tuning range when thinner wells and intersubband transitions are involved [1]. In prior work described at last's year's conference, we showed the fabrication of an electrostatic actuator to actively adjust the air gap distance between two quantum wells which were set apart on a nanometer-scale.…”
Section: Introductionmentioning
confidence: 89%
“…Changes in the photoluminescence from such structure would indicate tuning of the electron states. Previous work has shown that mechanical coupling changes between two 200Å quantum wells across a 20nm gap was able to shift the photoluminescence wavelength up to 22nm, with theoretical prediction of larger tuning range when thinner wells and intersubband transitions are involved [1]. In prior work described at last's year's conference, we showed the fabrication of an electrostatic actuator to actively adjust the air gap distance between two quantum wells which were set apart on a nanometer-scale.…”
Section: Introductionmentioning
confidence: 89%
“…Also, their band gap and other physical parameters have been influenced by materials and quantum size effects introduced during crystal formation [2]. However, even if there is a link between photonic and electronic structures in terms of similarity of behavior, it still exists a significant difference between photons in an optical cavity [3] and the behavior of electronic waves in the band of a solid [4]. Semiconductors are used as basic structure in various devices such avalanche photodiodes [5], diode lasers [6], quantum cascade lasers [7], photovoltaics, solar energy harvesting [8], inter-sub-band detectors [9], unipolar avalanche photodiodes [10], and modulators [11].…”
Section: Introductionmentioning
confidence: 99%