Mechanical effect of colloidal silica in copper chemical mechanical planarization

Lee, Hyunseop; Joo, Sukbae; Jeong, Haedo

doi:10.1016/j.jmatprotec.2009.05.027

Cited by 51 publications

(19 citation statements)

References 19 publications

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“…Accordingly, excessive Cu dishing and dielectric erosion must be minimized in order to realize a finer line width. [8][9][10][11][12] One solution to minimize these defects is the use of a surfactant, described herein. Surfactants are generally used to reduce surface tension by forming micelle structures around the hydrophobic or hydrophilic regions of a molecule.…”

Section: 7mentioning

confidence: 99%

Effect of surfactant on package substrate in chemical mechanical planarization

Jang

Jeong

Yuh

et al. 2015

Int. J. of Precis. Eng. and Manuf.-Green Tech.

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The demand for pattern miniaturization on package substrates has been steadily increasing. One technical innovation for the package substrate manufacturing process was chemical mechanical planarization (CMP). In conventional wiring, it was possible to remove extraneous copper through only the etching process. However, etching defects occur with narrower line widths. As the package substrate has a Cu hybrid structure through Cu plating and copper clad laminate (CCL) removal, it is necessary to apply the CMP to remove excess copper. However, defects are generated by the CMP process due to mechanical and chemical effects from the slurry. This study investigated the surfactant effect on Cu dishing and erosion in patterns with approximately 10/10 µm line width and spacing. The conventional Cu slurry without a surfactant had severe erosion (0.58 µm) in Cu patterns of 4/6 µm and deep dishing (4.2 µm) in Cu patterns of 14/16 µm. However, the experimental results showed that the friction force during CMP decreased, with smaller dishing and erosion as surfactant concentration increased. Finally, globally planarized Cu patterns were realized with an erosion range of 0.22 µm to 0.35 µm and a dishing range of 0.37 µm to 0.69 µm with 3 wt.% surfactant.

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Section: 7mentioning

confidence: 99%

Effect of surfactant on package substrate in chemical mechanical planarization

Jang

Jeong

Yuh

et al. 2015

Int. J. of Precis. Eng. and Manuf.-Green Tech.

Self Cite

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“…[5][6][7][8] Preston's equation is a purely empirical relation that indicates that the material removal rate (MRR) is proportional to the downward pressure (P), the relative velocity (V ), and Preston's ratio. 9 Park et al made use of a CMP model by incorporating both chemical and mechanical effects.…”

Section: Introductionmentioning

confidence: 99%

Research on influences of contact force in chemical mechanical polishing (CMP) process

et al. 2014

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A series of simulations of chemical mechanical polishing (CMP) were conducted to investigate the contact force between abrasive particles and specimens by using the finite element method (FEM). In this paper, a micro-contact model, which only involves the mechanical interactions, was set up to simulate the polishing process by changing the processing parameters, including the downward pressure, abrasive size, and polishing speed. Simulation results show that the contact force becomes larger when the downward pressure increases. In addition, when the downward pressure and abrasive size increase, the fluctuation of the contact force becomes large, whereas it declines with decreases in the polishing speed. In addition, corresponding CMP experiments were done to investigate the material removal rate (MRR) and polished average roughness (Ra) under different simulation conditions. Through the establishment of the contact force properties in the simulation and the MRR and Ra in the CMP experiment, qualitative research has been done on the relationship between the contact force in the simulation and experimental results. Experimental results indicate that the MRR and surface roughness are influenced by the contact force. A high MRR can be obtained by a large contact force and dramatic fluctuations can lead to poor surface-finish quality. The investigation contributes to obtaining higher polishing efficiency and lower surface roughness through optimization of the polishing parameters.

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“…Normally adding colloidal silica in the slurry can promote the removal rate [3][4][5][6]. It can promote the mechanical action to make the removal of surface metal oxide easier and keep the corrosion chemical reaction continuing.…”

Section: Introductionmentioning

confidence: 99%

Effects of colloidal silica on the CMP of Molybdenum in the alkaline slurry

Feng

Cao

Feng

et al. 2014

Proceedings of International Conference on Planarization/CMP Technology 2014

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The effects of colloidal silica on the CMP of Molybdenum (Mo) are investigated in different slurries with H 2 O 2 as oxidizer. It is found that both RR (removal rate) and SER (static etching rate) decrease after adding colloidal silica into the alkaline slurry. The adsorption between the colloidal silica particles and Mo film is observed. Raman spectra show that silicomolybdic acid forms from reaction between colloidal silica and Mo oxide. The mechanism of colloidal silica's inhibition on Mo removal is discussed.

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Mechanical effect of colloidal silica in copper chemical mechanical planarization

Cited by 51 publications

References 19 publications

Effect of surfactant on package substrate in chemical mechanical planarization

Effect of surfactant on package substrate in chemical mechanical planarization

Research on influences of contact force in chemical mechanical polishing (CMP) process

Effects of colloidal silica on the CMP of Molybdenum in the alkaline slurry

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