Mechanical Fatigue Resistance of Polydiketopyrrolo‐Pyrrole‐Dithienylthieno[3,2‐b]thiophene‐Based Flexible Field‐Effect Transistors

Kubik, Paweł; Waliszewski, Witold; Nosal, Andrzej; Tomczyk, Mariusz; Adamski, Adrian; Gazicki-Lipman, M.; Blom, Paul W. M.; Marszałek, Tomasz; Pisula, Wojciech

doi:10.1002/admi.202200206

Cited by 4 publications

(1 citation statement)

References 56 publications

(77 reference statements)

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“…However, the change in V th from 0 to 1000 cycles for device set B is not as drastic as the values in device set A, and therefore does not require a significant increase in source-drain bias voltage required to power the OFETs. Overall, the observed trend for device sets A and B aligns with previous literature for OFETs prepared on flexible polyethylene terephthalate (PET), − showing that bending tensile deformation initially significantly decreases charge mobility, followed by a relative stabilization once cracks form. Notably, deformation perpendicular to the channel exerts a greater influence on charge transport than parallel deformation.…”

Section: Resultssupporting

confidence: 86%

Impact of Mechanical Stress on Shellac-Based Organic Field-Effect Transistors Fabricated on Paper Substrates

Skaf,

Gomes,

Hussein

et al. 2024

ACS Appl. Polym. Mater.

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Recent advancements in the development of organic electronics have led to the investigation of natural, biodegradable materials to achieve greener alternatives to current electronics. Shellac, a natural resin material, has recently shown great potential as a dielectric and substrate in greener organic electronics. With this material, the evaluation of other properties, such as mechanical compatibility, is necessary to explore the avenue of naturally sourced materials in the development of biodegradable, flexible electronics. This work investigates the effects of mechanical strains on the performance of functional paper-based organic field-effect transistors through compressive and tensile cyclic bending to examine the stability of the devices. Bottom-gate top-contact organic field-effect transistors were fabricated on paper using a DPP-based polymer (semiconductor) and shellac (dielectric). Finite element simulation was performed to provide a better understanding of the low and high areas of strain on the devices. Based on repetitive bending results, the devices undergoing compressive bending proved to be more stable over a period of 1000 cycles compared with the devices undergoing tensile bending. Our work confirms that the difference in Young’s modulus in these multilayered device structures significantly affects morphological changes during bending, with the presence of a layer of conjugated polymer mitigating these changes compared to shellac alone. Tensile bending in bilayer systems led to nanoscale crack formation, while compressive bending resulted in consistent microscale ridge formation, maintaining both consistent depth and height over 1000 cycles. Compressive bending exhibited superior electrical performance and stability, with devices experiencing slower declines in charge mobility and threshold voltages compared to those subjected to tensile bending, while repetitive bending perpendicular to the channel pathway hindered charge carrier movement due to the formation of cracks and ridges. The direction of bending, in relation to the direction of charge transport, also influenced the performance, exhibiting anisotropic properties due to mechanical stress. Through this study, we evaluate the electrical and mechanical capabilities of paper-based organic electronics in order to continue the optimization of these environmentally friendlier devices with the objective to highlight the potential of organic electronics as greener alternatives to current technologies.

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Section: Resultssupporting

confidence: 86%

Impact of Mechanical Stress on Shellac-Based Organic Field-Effect Transistors Fabricated on Paper Substrates

Skaf,

Gomes,

Hussein

et al. 2024

ACS Appl. Polym. Mater.

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Versatile Papertronics: Photo‐Induced Synapse and Security Applications on Papers

Choi,

Shin,

Kim

et al. 2024

Advanced Materials

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Paper is a readily available material in nature. Its recyclability, eco‐friendliness, portability, flexibility, and affordability make it a favored substrate for researchers seeking cost‐effective solutions. Electronic devices based on solution process are fabricated on paper and banknotes using PVK and SnO2 nanoparticles. The devices manufactured on paper substrates exhibit photosynaptic behavior under ultraviolet pulse illumination, stemming from numerous interactions on the surface of the SnO2 nanoparticles. A light‐modulated artificial synapse device is realized on a paper at a low voltage bias of −0.01 V, with an average recognition rate of 91.7% based on the Yale Face Database. As a security device on a banknote, 400 devices in a 20 × 20 array configuration exhibited random electrical characteristics owing to the local morphology of the SnO2 nanoparticles and differences in the depletion layer width at the SnO2/PVK interface. The security Physically Unclonable Functions (PUF) key based on the current distribution extracted at −1 V show unpredictable reproducibility with 50% uniformity, 48.7% inter‐Hamming distance, and 50.1% bit‐aliasing rates. Moreover, the device maintained its properties for more than 210 days under a curvature radius of 8.75 mm and bias and UV irradiation stress conditions.

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Mechanical Deformation Effects on Flexible Thin Film Transistors: A Comparison Between 6,13‐Bis(Triisopropylsilylethynyl)Pentacene and N,N′‐Bis‐(2‐Ethylhexyl)‐1,7‐Dicyanoperylene‐3,4:9,10‐bis(Dicarboximide) Derivatives

Mascia,

Concas,

Podda

et al. 2024

Adv Materials Inter

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In this work, the investigation of the surface strain‐induced electrical changes in two commonly employed solution‐processable organic semiconductors, i.e., 6,13‐bis(triisopropylsilylethynyl)pentacene (TIPS‐Pentacene) and N,N′‐bis‐(2‐ethylhexyl)−1,7‐dicyanoperylene‐3,4:9,10‐bis(dicarboximide) (N1400), is reported. A detailed electromechanical characterization of two sets of flexible organic field‐effect transistors is performed, clearly demonstrating that both systems are affected by mechanical deformation in terms of electrical performance. However, the N1400 system shows a much more stable and reproducible response, even after continuous mechanical stress. XRD and AFM analysis demonstrate that such difference is mainly related to the changes induced on the two thin film morphology by the applied deformations.

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Mechanical Fatigue Resistance of Polydiketopyrrolo‐Pyrrole‐Dithienylthieno[3,2‐b]thiophene‐Based Flexible Field‐Effect Transistors

Cited by 4 publications

References 56 publications

Impact of Mechanical Stress on Shellac-Based Organic Field-Effect Transistors Fabricated on Paper Substrates

Impact of Mechanical Stress on Shellac-Based Organic Field-Effect Transistors Fabricated on Paper Substrates

Versatile Papertronics: Photo‐Induced Synapse and Security Applications on Papers

Mechanical Deformation Effects on Flexible Thin Film Transistors: A Comparison Between 6,13‐Bis(Triisopropylsilylethynyl)Pentacene and N,N′‐Bis‐(2‐Ethylhexyl)‐1,7‐Dicyanoperylene‐3,4:9,10‐bis(Dicarboximide) Derivatives

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