Mechanical modelling of capacitive RF MEMS shunt switches

Marcelli, R.; Lucibello, Andrea; Angelis, Giorgio De; Proietti, Emanuela; Comastri, Daniele

doi:10.1007/s00542-009-1007-y

Cited by 14 publications

(8 citation statements)

References 15 publications

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“…11, the "pull-in" voltage for a single central actuation (20-35 V) is also reported for each switch. Figure 12 shows that the resonance frequency (y = 20x 1.5 ) fits well with the electrical model (10). This result depends directly on the result for C down .…”

Section: Scalabilitysupporting

confidence: 55%

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Frequency Scalable Model for MEMS Capacitive Shunt Switches at Millimeter-Wave Frequencies

Puyal

Dragomirescu

Villeneuve

et al. 2009

IEEE Trans. Microwave Theory Techn.

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This paper presents an approach to RF MEMS capacitive shunt switch design from K-band up to W-band, based on the scalability of the RF MEMS switch with frequency. The parameters of the switch's equivalent circuit model also follow scaling rules. The measurement results of the fabricated switches show an excellent agreement with simulations which allow to validate the MEMS model in the entire band from 20 GHz up to 94 GHz. This model is going to be used in phase shifter circuit design for antenna array applications. First 60-GHz phase shifter results are also reported here.

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Section: Scalabilitysupporting

confidence: 55%

“…Compared to this last model, the new aspect is to introduce frequency scalability on the switch model to improve and simplify RF MEMS integrated circuit design at millimeter wave frequencies. Other approaches have been also published including the dynamical [9] or mechanical [10] aspects of RF MEMS.…”

mentioning

confidence: 99%

Frequency Scalable Model for MEMS Capacitive Shunt Switches at Millimeter-Wave Frequencies

Puyal

Dragomirescu

Villeneuve

et al. 2009

IEEE Trans. Microwave Theory Techn.

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“…More complex formulas can be derived for rectangular cantilever beams [13,14]. Complex beam geometries require simulation work in order to determine their actuation and release voltages, but in some special cases, useful approximate analytical formulas can be derived [2,15].…”

Section: Rf-mems Switch As a Device Based On An Electrical Instabilitymentioning

confidence: 99%

“…Actuators 2019, 8,15 6 of 10 square root of the temperature difference when the residual stress is high, as can be seen from Equation (4). (4) where kelastic(E) is the part of the spring constant which is stress independent and determined only by the elastic modulus E and B is a constant which depends on the beam geometry.…”

Section: Instabilities Due To Temperature Variationsmentioning

confidence: 99%

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Instability and Drift Phenomena in Switching RF-MEMS Microsystems

Mulloni

2019

Actuators

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MEMS switches include mobile beams in their mechanical structure and these suspended parts are essential for the device functioning. This paper illustrates the most important instability phenomena related to MEMS switches. Starting from the most important instability exploited in these devices—the electrical actuation—the paper also analyzes other important effects related to instability phenomena, which are very common in this type of technology. Instabilities due to dielectric charge trapping, fabrication tolerances, mechanical deformation, contact wear, and temperature variation are duly analyzed, giving a comprehensive view of the complexity encountered in the reliable functioning of these apparently simple devices.

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