2014
DOI: 10.1021/am503236m
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Mechanical Properties and Interface Characteristics of Nanoporous Low-kMaterials

Abstract: Low dielectric constant (low-k) insulator films with outstanding mechanical strength and fracture resistance are needed urgently for the new generation of ultra-large-scale integrated circuits (ULSI). In this paper, the mechanical properties of low-k materials and the adhesion strengths between these materials with silica have been analyzed by using molecular dynamics (MD) simulations. Atomistic models of two kinds of representative low-k materials [nanoporous amorphous silica (n-a-SiO2) and SiOCH] and their c… Show more

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Cited by 23 publications
(18 citation statements)
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“…For every step, the trial movement was chosen randomly with a fixed probability, which was 20% guest molecule translation, 20% guest molecule rotation, 55% guest molecule exchange, and 15% guest molecule regrowth. The Ewald summation method , was used to calculate the electrostatic potential energy with the calculation accuracy of 4.184 kJ/mol. The cut-off distance was 12 Å .…”
Section: Models and Methodsmentioning
confidence: 99%
“…For every step, the trial movement was chosen randomly with a fixed probability, which was 20% guest molecule translation, 20% guest molecule rotation, 55% guest molecule exchange, and 15% guest molecule regrowth. The Ewald summation method , was used to calculate the electrostatic potential energy with the calculation accuracy of 4.184 kJ/mol. The cut-off distance was 12 Å .…”
Section: Models and Methodsmentioning
confidence: 99%
“…For example, polytetrafluoroethylene (PTFE) is a satisfactory low dielectric material used at high frequency because it shows the lowest D k (2.0) and lowest D f (near 1 × 10 –4 ) at a broad range of frequencies. ,, Nevertheless, PTFE always shows poor processability and has an inert surface, which hinder its application as the laminating resin for the production of the high-frequency printed circuit boards (PCB). On the other hand, generating holes in polymers to form porous materials is also an effective way for the production of low D k materials. However, how to precisely control the sizes and distribution of the pores is a challenging task. Moreover, the mechanical properties and thermostability of the porous materials need to be improved.…”
Section: Introductionmentioning
confidence: 99%
“…The charges of O II ( q (O II ) = −0.67 |e|) were restricted by the relation: 2­( q (O II ) + q (H)) = q (O I ) to preserve the neutrality of the zeolite lattice. The charges of benzene were chosen as the same with most common charges: hydrogen atoms carry a charge of +0.153 |e| and carbon atoms a charge of −0.153 |e|. The summation methods of van der Waals interactions and electrostatic interactions were applied as atom-based and Ewald, respectively. The cutoff value of van der Waals interaction was set as large as 2.4 nm, and the calculation accuracy of electrostatic potential energy was 0.004 kJ/mol. All the simulations are applied with the periodic boundary conditions. , …”
Section: Models and Methodsmentioning
confidence: 99%