We investigate the thermodynamic stability of carbon-rich icosahedral boron carbide at different compositions, ranging from B 4 C to B 2 C, using first-principles calculations. Apart from B 4 C, generally addressed in the literature, B 2.5 C, represented by B 10 C p 2 (C-C), where C p and (C-C) denote a carbon atom occupying the polar site of the icosahedral cluster and a diatomic carbon chain, respectively, is predicted to be thermodynamically stable under high pressures with respect to B 4 C as well as pure boron and carbon phases. The thermodynamic stability of B 2.5 C is determined by the Gibbs free energy G as a function of pressure p and temperature T , in which the contributions from the lattice vibrations and the configurational disorder are obtained within the quasiharmonic and the mean-field approximations, respectively. The stability range of B 2.5 C is then illustrated through the p-T phase diagrams. Depending on the temperatures, the stability range of B 2.5 C is predicted to be within the range between 40 and 67 GPa. At T 500 K, the icosahedral C p atoms in B 2.5 C configurationally disorder at the polar sites. By investigating the properties of B 2.5 C, e.g., elastic constants and phonon and electronic density of states, we demonstrate that B 2.5 C is both mechanically and dynamically stable at zero pressure, and is an electrical semiconductor. Furthermore, based on the sketched phase diagrams, a possible route for experimental synthesis of B 2.5 C as well as a fingerprint for its characterization from the simulations of x-ray powder diffraction pattern are suggested.