Mechanical properties of PECVD a-SiC:H thin films prepared from methyltrichlorosilane

Иващенко, В. И.; Dub, S. N.; Porada, O. K.; Ivashchenko, L. A.; Skrynskyy, P. L.; Stegniy, A.I.

doi:10.1016/j.surfcoat.2005.11.087

Cited by 14 publications

(9 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As will be shown later, the in-depth oxygen profile in the ferrous alloy is quite similar at variable SiC x :H film deposition temperature, indicating that oxygen atoms do not diffuse into the substrate. Regarding the SiC content increasing, we note that many authors have reported similar behaviors on growing hydrogenated amorphous silicon carbide (a-SiC:H) and amorphous silicon carbide (a-SiC) films. ,− These studies show that the increasing of the substrate temperature during the film growth modifies the surface reactivity by increasing the atoms mobility and thus promoting the formation of more stable compounds containing Si–C bonds . It is interesting to note that the Si–C bonds increasing at higher temperature deposition prompts the material densification by favoring reactions leading to decreasing hydrogen and oxygen contents in the SiC x :H film structure. , Despite the fact that it is not possible to analyze hydrogen bonded to carbon and silicon atoms in the buffer layer structure by XPS, we expect that the hydrogen acts as oxygen, being thermally desorbed at higher temperatures.…”

Section: Resultsmentioning

confidence: 53%

“…At temperatures higher than 100 °C, we suggest that physisorbed oxygen species such as water and molecular oxygen are easily desorbed from the material surface. It is common to observe that the oxygen content in deposited SiC x :H compounds decreases with the increasing of both temperature and input power of the plasma. , Moreover, the transition from Si–O to Si–C is not thermodynamically possible because the Gibbs free energy of formation for SiO 2 is more negative than for SiC at either 100 °C (−842.72 kJ mol –1 versus −70.24 kJ mol –1 ) or 500 °C (−770.25 kJ mol –1 versus −66.99 kJ mol –1 ), which supports the oxygen desorption mechanism . Furthermore, it is important to note that hydrogen also might be desorbed from the buffer layer structure at higher deposition temperatures, being involved in the chemical adhesion mechanism on the a-C:H/SiC x :H interface.…”

Section: Resultsmentioning

confidence: 83%

See 1 more Smart Citation

Identification of the Chemical Bonding Prompting Adhesion of a-C:H Thin Films on Ferrous Alloy Intermediated by a SiC_x:H Buffer Layer

Cemin

Bim

Leidens

et al. 2015

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Amorphous carbon (a-C) and several related materials (DLCs) may have ultralow friction coefficients that can be used for saving-energy applications. However, poor chemical bonding of a-C/DLC films on metallic alloys is expected, due to the stability of carbon-carbon bonds. Silicon-based intermediate layers are employed to enhance the adherence of a-C:H films on ferrous alloys, although the role of such buffer layers is not yet fully understood in chemical terms. The chemical bonding of a-C:H thin films on ferrous alloy intermediated by a nanometric SiCx:H buffer layer was analyzed by X-ray photoelectron spectroscopy (XPS). The chemical profile was inspected by glow discharge optical emission spectroscopy (GDOES), and the chemical structure was evaluated by Raman and Fourier transform infrared spectroscopy techniques. The nature of adhesion is discussed by analyzing the chemical bonding at the interfaces of the a-C:H/SiCx:H/ferrous alloy sandwich structure. The adhesion phenomenon is ascribed to specifically chemical bonding character at the buffer layer. Whereas carbon-carbon (C-C) and carbon-silicon (C-Si) bonds are formed at the outermost interface, the innermost interface is constituted mainly by silicon-iron (Si-Fe) bonds. The oxygen presence degrades the adhesion up to totally delaminate the a-C:H thin films. The SiCx:H deposition temperature determines the type of chemical bonding and the amount of oxygen contained in the buffer layer.

show abstract

Section: Resultsmentioning

confidence: 53%

Section: Resultsmentioning

confidence: 83%

Identification of the Chemical Bonding Prompting Adhesion of a-C:H Thin Films on Ferrous Alloy Intermediated by a SiC_x:H Buffer Layer

Cemin

Bim

Leidens

et al. 2015

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

show abstract

“…Previously reported work in PECVD of a-SiC:H has focused on synthesis using the following precursors: SiH 4 and CH 4 [125,129,[139][140][141][142], SiH 4 and ethylene (C 2 H 4 ) [116], methylsilane ((CH 3 )SiH) [120], trimethylsilane ((CH 3 ) 3 SiH) [128,143], methyltrichorosilane (CH 3 SiCl 3 , MTS) [121,144], hexamethyldisilane (C 6 H 18 Si 12 , HMDS) [117,138,145], and silacyclobutane (SiC 3 H 8 , SCB) [120,142]. CVD-based deposition processes that have been used to deposit a-SiC films include high-density plasma CVD (HDPCVD) [126], electron cyclotron resonance CVD (ECRCVD) [146] …”

Section: Materials Preparationmentioning

confidence: 99%

Micro‐ and nanomechanical structures for silicon carbide MEMS and NEMS

Zorman

Parro

2008

Physica Status Solidi (b)

100

View full text Add to dashboard Cite

Silicon carbide (SiC) is recognized as the leading semiconductor for high power and high temperature electronics owing to its outstanding electrical properties combined with mature processing technologies for monolithic structures. SiC has long been known for its outstanding mechanical and chemical properties making it equally attractive for mechanical structures in micro‐ and nanoelectromechanical systems (MEMS and NEMS). Recent advancements in bulk and surface micromachining have led to the development of SiC analogues to common Si‐based devices (i.e., resonators, pressure sensors). This paper presents an overview of MEMS and NEMS technologies that incorporate SiC as a key component in their mechanical structure, providing both a historical perspective as well as recent developments. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

“…An important contribution to the developing technology of preparing Si x C y :H coatings by PACVD from MTCS diluted in hydrogen was made by a group of Ukrainian researchers [4][5][6][7][8]. They used a non-standard plasmochemical installation with a high frequency (40.7 MHz) plasma generator.…”

Section: Introductionmentioning

confidence: 99%

“…They used a non-standard plasmochemical installation with a high frequency (40.7 MHz) plasma generator. Their studies concentrated on the major technological parameters and their effects on microstructure [4][5][6] and chemical composition [5] and hence on the electronic [4,5], tribological [7,8] and mechanical [6] properties of the deposit. Among other things, it was established that the ratio of the MTCS and H 2 concentrations strongly affected the film structures [4].…”

Section: Introductionmentioning

confidence: 99%

An Analysis of Low Frequency Discharge in a CH3SiCl3-Ar-H2 Mixture by Optical Emission Spectroscopy and Actinometry

Kułakowska-Pawlak

Jamróz

2010

Plasma Chem Plasma Process

View full text Add to dashboard Cite

Low frequency (100 kHz) discharge in Ar-H 2 and CH 3 SiCl 3 -Ar-H 2 mixtures was studied to obtain information on the processes involved in plasma deposition of Si x C y :H films from CH 3 SiCl 3 -Ar-H 2 plasma once the properties of Ar-H 2 plasma are known. The plasmas were studied using optical emission spectroscopy. The addition of small amounts of nitrogen to the plasma mixtures also permitted the use of an actinometry technique. First, plasma parameters (electron density and temperature) and actinometric concentrations of atomic hydrogen in an argon-hydrogen plasma were investigated as a function of the hydrogen content in the feed. Second, the emission intensities of Si, Si ? , CH, H, Ar and Ar ? species produced in the CH 3 SiCl 3 -Ar-H 2 discharge were analysed as a function of time following the introduction of CH 3 SiCl 3 (methyltrichlorosilane, MTCS) to the argon-hydrogen plasmas with various proportions of the feed gasses. The results reveal a rapid decay of the Si-excited state number density versus time, while those of Si ? and CH fell off more slowly. The emission of atomic silicon was believed to be a result of electron impact dissociative and excitation processes occurring in the bulk of the discharge, whereas the Si ? and CH seemed to originate mainly from products of sputtering of the growing film surface. The fragmentation of the MTCS associated with HCl formation and enhanced atomic hydrogen production as a result of HCl dissociation are proposed. Variations in the radical densities of H and CH 3 were determined using an actinometry technique. The results indicate a significant role for H 2 in gas-phase reactions occurring in the CH 3 SiCl 3 -Ar-H 2 plasma, as well as in gas-surface interactions, leading to competition between deposition and chemical sputtering of already deposited material.

show abstract

Mechanical properties of PECVD a-SiC:H thin films prepared from methyltrichlorosilane

Cited by 14 publications

References 24 publications

Identification of the Chemical Bonding Prompting Adhesion of a-C:H Thin Films on Ferrous Alloy Intermediated by a SiC_x:H Buffer Layer

Identification of the Chemical Bonding Prompting Adhesion of a-C:H Thin Films on Ferrous Alloy Intermediated by a SiC_x:H Buffer Layer

Micro‐ and nanomechanical structures for silicon carbide MEMS and NEMS

An Analysis of Low Frequency Discharge in a CH3SiCl3-Ar-H2 Mixture by Optical Emission Spectroscopy and Actinometry

Contact Info

Product

Resources

About

Mechanical properties of PECVD a-SiC:H thin films prepared from methyltrichlorosilane

Cited by 14 publications

References 24 publications

Identification of the Chemical Bonding Prompting Adhesion of a-C:H Thin Films on Ferrous Alloy Intermediated by a SiCx:H Buffer Layer

Identification of the Chemical Bonding Prompting Adhesion of a-C:H Thin Films on Ferrous Alloy Intermediated by a SiCx:H Buffer Layer

Micro‐ and nanomechanical structures for silicon carbide MEMS and NEMS

An Analysis of Low Frequency Discharge in a CH3SiCl3-Ar-H2 Mixture by Optical Emission Spectroscopy and Actinometry

Contact Info

Product

Resources

About

Identification of the Chemical Bonding Prompting Adhesion of a-C:H Thin Films on Ferrous Alloy Intermediated by a SiC_x:H Buffer Layer

Identification of the Chemical Bonding Prompting Adhesion of a-C:H Thin Films on Ferrous Alloy Intermediated by a SiC_x:H Buffer Layer