Mechanical regulation to interfacial thermal transport in GaN/diamond heterostructures for thermal switch

Yu, Xiaotong; Li, Yifan; He, Renjie; Wen, Yanwei; Chen, Rong; Xu, Baoxing; Gao, Yuan

doi:10.1039/d4nh00245h

Nanoscale Horiz.

2024

DOI: 10.1039/d4nh00245h

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Mechanical regulation to interfacial thermal transport in GaN/diamond heterostructures for thermal switch

Xiaotong Yu,

Yifan Li,

Renjie He

et al.

Abstract: Gallium nitride offers an ideal material platform for the next-generation high-power electronics device. Thermal management against the ever-growing power density has become a major bottleneck to the performance, reliability, and...

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Cited by 2 publications

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Effect of AlN interlayer thickness on thermal conductances of GaN epilayer and GaN/SiC interface in GaN-on-SiC heterostructures

Wang,

Zhang,

et al. 2025

Applied Surface Science

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Effect of AlN interlayer thickness on thermal conductances of GaN epilayer and GaN/SiC interface in GaN-on-SiC heterostructures

Wang,

Zhang,

et al. 2025

Applied Surface Science

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Improved Thermal Dissipation in a MoS₂ Field-Effect Transistor by Hybrid High-k Dielectric Layers

Huang,

Li,

et al. 2024

ACS Appl. Mater. Interfaces

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Transition metal dichalcogenides like MoS 2 have been considered as crucial channel materials beyond silicon to continuously advance transistor scaling down owing to their two-dimensional structure and exceptional electrical properties. However, the undesirable interface morphology and vibrational phonon frequency mismatch between MoS 2 and the dielectric layer induce low thermal boundary conductance, resulting in overheating issues and impeding electrical performance improvement in the MoS 2 field-effect transistors. Here, we employed hybrid high-k dielectric layers of Al 2 O 3 /HfO 2 to simultaneously reduce the interfacial thermal resistance and improve device electrical performance. The enhanced contact, greater vibrational phonon overlapping region, and stronger interfacial bonding force between the top Al 2 O 3 layer and MoS 2 promote the heat removal efficiency across the interface to the substrate. Under the same input power density, the temperature profile of the MoS 2 transistor on the Al 2 O 3 /HfO 2 has been largely reduced compared to that of the device on HfO 2 , with a maximum reduction of 49.5 °C. In addition, the field-effect mobility and current of MoS 2 devices on the Al 2 O 3 /HfO 2 high-k dielectric layers have been significantly improved, attributed to the depressed electron scattering and trap states at the interface. The design of the hybrid high-k dielectric layers provides an efficient solution to simultaneously improve the thermal and electrical performance of the two-dimensional devices. KEYWORDS: thermal dissipation, thermal boundary conductance, MoS 2 field-effect transistor, high-k dielectric layer, Al 2 O 3 /HfO 2 , temperature profile

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Mechanical regulation to interfacial thermal transport in GaN/diamond heterostructures for thermal switch

Abstract: Gallium nitride offers an ideal material platform for the next-generation high-power electronics device. Thermal management against the ever-growing power density has become a major bottleneck to the performance, reliability, and...

Cited by 2 publications

References 59 publications

Effect of AlN interlayer thickness on thermal conductances of GaN epilayer and GaN/SiC interface in GaN-on-SiC heterostructures

Effect of AlN interlayer thickness on thermal conductances of GaN epilayer and GaN/SiC interface in GaN-on-SiC heterostructures

Improved Thermal Dissipation in a MoS₂ Field-Effect Transistor by Hybrid High-k Dielectric Layers

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Mechanical regulation to interfacial thermal transport in GaN/diamond heterostructures for thermal switch

Abstract: Gallium nitride offers an ideal material platform for the next-generation high-power electronics device. Thermal management against the ever-growing power density has become a major bottleneck to the performance, reliability, and...

Cited by 2 publications

References 59 publications

Effect of AlN interlayer thickness on thermal conductances of GaN epilayer and GaN/SiC interface in GaN-on-SiC heterostructures

Effect of AlN interlayer thickness on thermal conductances of GaN epilayer and GaN/SiC interface in GaN-on-SiC heterostructures

Improved Thermal Dissipation in a MoS2 Field-Effect Transistor by Hybrid High-k Dielectric Layers

Contact Info

Product

Resources

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Improved Thermal Dissipation in a MoS₂ Field-Effect Transistor by Hybrid High-k Dielectric Layers