Mechanical relaxation of strained semiconducting stripes: Influence on optoelectronic properties

Fierling, G.; Buchheit, M.; Letartre, Xavier; Gendry, M.; Viktorovitch, P.; Sidoroff, F.; Lainé, Jean-Pierre

doi:10.1063/1.119953

Cited by 3 publications

(1 citation statement)

References 11 publications

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“…However, another crystal deformation contribution must be taken into account: due to the creation of free surfaces at the vertical etched sidewalls, the initial biaxial compressive stress within the InAs x P 1−x QWs has to relax partially. This kind of relaxation has been investigated in details both experimentally and theoretically [15,16]. In our sample, it should consist mainly of a uniaxial tensile deformation perpendicular to the stripe length, and parallel to the wafer surface.…”

Section: Pl Intensitiesmentioning

confidence: 99%

Low temperature micro-photoluminescence spectroscopy of microstructures with InAsP/InP strained quantum wells

Landesman¹,

Isik-Goktas²,

LaPierre³

et al. 2021

J. Phys. D: Appl. Phys.

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Ridge microstructures were prepared by reactive ion etching (RIE) of a series of stacked InAs x P 1−x quantum wells (QWs) with step graded compositions grown on InP by molecular beam epitaxy. These microstructures were characterized by low temperature micro-photoluminescence. The photoluminescence (PL) emission associated with each of the QWs was clearly identified and an accurate model for their line shape was implemented. The PL was measured in detail across etched ridge stripes of various widths. Two different RIE processes, CH 4 /H 2 and CH 4 /Cl 2 , were investigated. Variations of the integrated PL intensities across the etched stripes were observed. The PL intensities for all QWs increased gradually from the edge to the center of the ridge microstructures, over a length scale of 10 to 20 µm. On the other hand, the spectral peak position of the PL lines remained constant with high accuracy (0.2 to 0.4 meV, depending on which QW was considered) across the microstructures. These observations are discussed in terms of the mechanical stress induced by the RIE processes, the relaxation of the biaxial built-in compressive stress in the InAsP QWs (induced by the free surfaces at the vertical etched sidewalls), and also by the non-radiative recombination at these sidewalls. Altogether, this study illustrates the contribution that specially designed test structures, coupled with advanced spectroscopic characterization, can provide to the development of semiconductor photonic devices (e.g. lasers or waveguides) involving RIE processing.

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Section: Pl Intensitiesmentioning

confidence: 99%

Low temperature micro-photoluminescence spectroscopy of microstructures with InAsP/InP strained quantum wells

Landesman¹,

Isik-Goktas²,

LaPierre³

et al. 2021

J. Phys. D: Appl. Phys.

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Piezoelectrically induced electronic confinement obtained by three-dimensional elastic relaxation in III–V semiconducting overhanging beams

Fierling

Letartre

Viktorovitch

et al. 1999

Applied Physics Letters

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In this work, we demonstrate theoretically that the piezoelectric effect can be used to achieve confinement over quantum distances in systems grown on [001] GaAs substrates. Such an effect can be achieved by making use of elastic relaxation of micromachined strained structures. At the free corners of the overhanging beams, shear deformations appear which induce a three-dimensional V-shape potential. Calculations show the creation of quantum dots near the corners of the overhanging beams.

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Optical approach for determining strain anisotropy in quantum wells

Biermann¹,

Diaz-Barriga²,

Rabinovich³

2003

Appl. Opt.

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Anisotropic in-plane strain arises in quantum-well systems by design or unintentionally. We propose two methods of measuring the in-plane strain anisotropy based on the optical polarization anisotropy that arises with anisotropic in-plane strain. One method uses purely optical means to determine the strain anisotropy in quantum wells under a compressive strain that is spatially varying. A second approach, applicable to quantum wells under tensile strain or with strain that does not vary with position, requires the application of a uniaxial in-plane stress. Although the second method is experimentally more difficult, it allows analysis of systems that would otherwise be inaccessible.

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Mechanical relaxation of strained semiconducting stripes: Influence on optoelectronic properties

Cited by 3 publications

References 11 publications

Low temperature micro-photoluminescence spectroscopy of microstructures with InAsP/InP strained quantum wells

Low temperature micro-photoluminescence spectroscopy of microstructures with InAsP/InP strained quantum wells

Piezoelectrically induced electronic confinement obtained by three-dimensional elastic relaxation in III–V semiconducting overhanging beams

Optical approach for determining strain anisotropy in quantum wells

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