“…In addition, the sintering method for SiC CMCs includes the hot pressing (HP), 11,12 precursor infiltration and pyrolysis (PIP), 13 CVD, 14,15 chemical vapor infiltration (CVI), 16 reactive melt infiltration (RMI), 17,18 nano-impregnated transient eutectic (NITE) 19,20 and slurry infiltration and HP sintering (SIHP). 21 Among them, the SIHP is the earliest method for the preparation of SiC CMCs, it requires a lower sintering temperature, a shorter time, and the sample has a higher density.…”