Mechanical scanning probe nanolithography: modeling and application

Lytvyn, P. M.

doi:10.15407/spqeo15.04.321

Semicond. Phys. Quantum Electron. Optoelectron.

2012

DOI: 10.15407/spqeo15.04.321

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Mechanical scanning probe nanolithography: modeling and application

P. M. Lytvyn¹

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2018

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Features of mechanical scanning probe lithography on graphene oxide and As(Ge)Se chalcogenide resist

Lytvyn¹

2018

Semicond. Phys. Quantum Electron. Optoelectron.

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Combined mechanical scanning probe lithography (SPL) approach applied for the direct mask-less modification of graphene oxide (GO) flakes and the mask patterns engraving in layers of chalcogenide resist with a nanometer scale resolution have been implemented in this work. It was compared the dynamics of mechanical modification of chalcogenide films and multilayer GO flakes deposited from an aqueous suspension. The double-layer As 40 Se 60 /As 4 Ge 30 S 66 chalcogenide resist developed for mechanical SPL and pattern formation processes have optimized. The resist with the thickness close to 100 nm provides formation of minimal pattern elements with the size of several tens nanometers. The SPL approach was realized on the basis of serial NanoScope IIIa Dimension 3000 TM scanning probe microscope, and original software utilities were developed. These mechanical SPL could be intended for the verification of innovative ideas in academic researches, the laboratory-level device prototyping, developing the functional prototypes of new devices in bio/nanosensorics, plasmonics, 2D electronics and other modern technology branches.

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Features of mechanical scanning probe lithography on graphene oxide and As(Ge)Se chalcogenide resist

Lytvyn¹

2018

Semicond. Phys. Quantum Electron. Optoelectron.

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Mechanical scanning probe nanolithography: modeling and application

Cited by 1 publication

References 11 publications

Features of mechanical scanning probe lithography on graphene oxide and As(Ge)Se chalcogenide resist

Features of mechanical scanning probe lithography on graphene oxide and As(Ge)Se chalcogenide resist

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