Mechanical stress and thermal-elastic properties of oxide coatings for use in the deep-ultraviolet spectral region

Thielsch, Roland; Gatto, Alexandre; Kaiser, Norbert

doi:10.1364/ao.41.003211

Cited by 70 publications

(27 citation statements)

References 14 publications

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“…The mechanical stress of optical thin films has been extensively investigated from IR to deep ultraviolet, extreme ultraviolet, and x-ray regimes. [5][6][7] A reversible CWL shift of IR NBF due to environment temperature variation has been observed. 1,4 A permanent upward CWL shift of IR NBF after annealing has also been reported.…”

Section: Introductionmentioning

confidence: 82%

Correlation between mechanical stress and optical property of SiO 2 /Ta 2 O5 multilayer UV narrow band filter deposited by plasma ion-assisted deposition

Wang

Maier

2005

SPIE Proceedings

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Multilayer SiO 2 /Ta 2 O 5 UV narrow-bandpass filters were deposited by a plasma ion-assisted process. The optimized PIAD process leads to densified multilayer coatings with a stabilized build-in compressive stress and un-shifted center wavelength. The correlation between stress reduction and center wavelength upward shift was established via post-deposition annealing at temperature ranging from 120 o C to 500 o C. Following 300 o C annealing, increased porosity and physical thickness of single layers of Ta 2 O 5 and SiO 2 were observed, via EMA modeling of ellipsometric data acquired around the quasi-Brewster angle. This is consistent with AFM measurement. The CWL upward shift was attributed to the micro-structural changes originating from intrinsic stress relaxation. Good agreement between the calculated CWL shift based on single layer test, and measured total CWL shift of the UV NBF suggests that the multilayer interfacial coupling effects might be ignorable for CWL shift and stress calculations.

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Section: Introductionmentioning

confidence: 82%

Correlation between mechanical stress and optical property of SiO 2 /Ta 2 O5 multilayer UV narrow band filter deposited by plasma ion-assisted deposition

Wang

Maier

2005

SPIE Proceedings

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“…Using the Stoney's equation, 10 the change in substrate curvature before and after coating deposited could be used for measuring the coating-induced stress. By convention, tensile stress was indicated as positive, while compressive stress as negative.…”

Section: Residual Stress Of Samplesmentioning

confidence: 99%

Anisotropic Laser-Induced Damage Threshold and Residual Stress of TiO<SUB>2</SUB> Sculptured Thin Films

Xiao¹,

Miao²,

Zhang³

et al. 2013

j. nanosci. nanotech.

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The residual stress and laser-induced damage threshold (LIDT) of TiO2 sculptured thin films prepared by glancing angle electron beam evaporation were studied. UV-Vis-NIR spectra and optical interferometer were employed to characterize the optical and mechanical properties, respectively. Optical microscopy and Raman spectra were used to observe damage morphology and analyze damage microstructure, respectively. It was found that the residual stress changed from compressive into tensile with increasing deposition angle. The LIDT was anisotropic with p- and s-polarization light, which was due to the anisotropic nanostructure and optical properties. Simultaneously, an optimum deposition angle for the maximum threshold of TiO2 film was about 60 degrees. The mechanism of laser-induced damage was thermal in nature. The process of thermal damage with crystallization is proved by Raman spectra.

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“…This value is realistic compared to the experimental intrinsic stress planar silicon oxidation 37 and also during HfO 2 deposition. 38 The standard thermal budget and the intrinsic stress for PECVD nitride is used for the gate stack definition. Particular attention is paid on the modeling of the etching step in order to match the shape of the source/drain recess regions as fine as possible.…”

Section: Stress Modeling Of Esige/cesl Pmos Device a Modeling Asmentioning

confidence: 99%

Stress mapping in strain-engineered silicon p-type MOSFET device: A comparison between process simulation and experiments

Krzeminski

2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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8 pagesInternational audienceStrain engineering is the main technological booster used by semiconductor companies for the 65 and 45nm technology nodes to improve the channel mobility and the electrical performance of logic devices. For 32 and 22nm nodes, intense research work focuses on the integration and optimisation of these different techniques by cumulating the effects of different stressors. To estimate the level and the distribution of the stress field generated in the transistor channel by such multiple processing steps is a complex issue. Process simulation has a role to play in order to face the many challenges in term of scalability, yield and design. The objective of this paper is first to evaluate the stress distribution generated by the two most usual processing steps: Contact Etch Stop Liner (CESL) and embedded SiGe Stressors (eSiGe). Next, the final stress field in nanoscale device resulting of these intentionally but also parasitic sources are evaluated. Process simulations have been able to quantify the global trend observed in these stressors in relatively close correlation with experiment

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Mechanical stress and thermal-elastic properties of oxide coatings for use in the deep-ultraviolet spectral region

Cited by 70 publications

References 14 publications

Correlation between mechanical stress and optical property of SiO 2 /Ta 2 O5 multilayer UV narrow band filter deposited by plasma ion-assisted deposition

Correlation between mechanical stress and optical property of SiO 2 /Ta 2 O5 multilayer UV narrow band filter deposited by plasma ion-assisted deposition

Anisotropic Laser-Induced Damage Threshold and Residual Stress of TiO<SUB>2</SUB> Sculptured Thin Films

Stress mapping in strain-engineered silicon p-type MOSFET device: A comparison between process simulation and experiments

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