Mechanical stress dependence of power device electrical characteristics

Tanaka, Hiroyuki; Hotta, Kazushi; Kuwano, Satoshi; Usui, Masanori; Ishiko, M.

doi:10.1109/ispsd.2006.1666056

Cited by 16 publications

(3 citation statements)

References 6 publications

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“…The effect of stress induced by packaging thermal expansion has been observed in experiment in [127] and in simulation in [128]. The experimental results in [127] have shown that the ON-state I-V curves of IGBTs depend on the applied stress (up to 400 MPa, both compressive and tensile), with about 10% change in ON-state voltage arising from a lateral (shear) stress on the device chip.…”

Section: ) Electrical Stress Effectsmentioning

confidence: 96%

“…The experimental results in [127] have shown that the ON-state I-V curves of IGBTs depend on the applied stress (up to 400 MPa, both compressive and tensile), with about 10% change in ON-state voltage arising from a lateral (shear) stress on the device chip. The simulation results in [128] show that the electron mobility is the principal cause of lateral stress dependence of the IGBT electrical properties.…”

Section: ) Electrical Stress Effectsmentioning

confidence: 99%

See 1 more Smart Citation

Condition Monitoring for Device Reliability in Power Electronic Converters: A Review

Yang

Xiang

Bryant

et al. 2010

IEEE Trans. Power Electron.

1,013

348

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Condition monitoring (CM) has already been proven to be a cost effective means of enhancing reliability and improving customer service in power equipment, such as transformers and rotating electrical machinery. CM for power semiconductor devices in power electronic converters is at a more embryonic stage; however, as progress is made in understanding semiconductor device failure modes, appropriate sensor technologies, and signal processing techniques, this situation will rapidly improve. This technical review is carried out with the aim of describing the current state of the art in CM research for power electronics. Reliability models for power electronics, including dominant failure mechanisms of devices are described first. This is followed by a description of recently proposed CM techniques. The benefits and limitations of these techniques are then discussed. It is intended that this review will provide the basis for future developments in power electronics CM.

show abstract

Section: ) Electrical Stress Effectsmentioning

confidence: 96%

Section: ) Electrical Stress Effectsmentioning

confidence: 99%

Condition Monitoring for Device Reliability in Power Electronic Converters: A Review

Yang

Xiang

Bryant

et al. 2010

IEEE Trans. Power Electron.

1,013

348

View full text Add to dashboard Cite

show abstract

“…2). Indeed, it would be particularly interesting, from a technological process point of view, to make use of already existing structures [15, 16]. Thus, compared to piezoresistors, no additionnal chip area is required.…”

Section: Introductionmentioning

confidence: 99%

VDMOS electrical parameters potentially usable as mechanical state indicators for power VDMOS assemblies

Marcault

Bourennane

Tounsi

et al. 2014

IET Circuits, Devices & Systems

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Power device reliability is a multidisciplinary domain. It requires design and integration of sensors, implementation of signal processing algorithms that allow processing the different data provided by the different sensors in order to predict by statistical means the device failure occurrence and consequently anticipate the power device replacement. Currently, for device ageing studies in a laboratory, electrical measurements of device parameters are often used as an indicator of device ageing. Furthermore, smart metal-oxide semiconductor technology integrates more and more sensors that permit to measure quantities such as on-state resistance or junction temperature of the device. In power vertical diffused metal oxide semiconductor (VDMOS) assemblies, it would be interesting to make use of the VDMOS electrical parameters deviations in order to monitor the ageing state of the power assembly. To that end, we carry-out in this paper a study mainly based upon electro-thermo-mechanical simulations in order to identify the power VDMOS electrical parameters that could be monitored in order to access to the mechanical state of the power assembly and therefore anticipate the assembly failure. The power VDMOS R on as well as zero temperature coefficient (ZTC) point are of interest because they are sensitive to mechanical stress. Consequently, in this paper, a procedure to minimise temperature impact on the Ron of the VDMOS transistor such that one could use the Ron as mechanical state indicator is shown. Another solution that makes use of a specific operating point of VDMOS (ZTC) which is temperature independent is also studied by simulations and experiment.

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Uni-axial mechanical stress effect on Trench Punch through IGBT under short-circuit operation

Belmehdi

Azzopardi

Benmansour

et al. 2009

Microelectronics Reliability

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Mechanical stress dependence of power device electrical characteristics

Cited by 16 publications

References 6 publications

Condition Monitoring for Device Reliability in Power Electronic Converters: A Review

Condition Monitoring for Device Reliability in Power Electronic Converters: A Review

VDMOS electrical parameters potentially usable as mechanical state indicators for power VDMOS assemblies

Uni-axial mechanical stress effect on Trench Punch through IGBT under short-circuit operation

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