Mechanical stresses and amorphization of ion-implanted diamond

Khmelnitsky, R. A.; Dravin, V. A.; Tal, Alexey A.; Latushko, Mikhail I.; Khomich, А.А.; Хомич, А. А.; Trushin, A. S.; Alekseev, Alexandr A.; Terentiev, Sergey A.

doi:10.1016/j.nimb.2013.03.030

Cited by 24 publications

(26 citation statements)

References 40 publications

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“…Both predictions are compatible with the experimental data within their respective uncertainties, although the theoretical predictions tend to systematically under-estimate the reduction in You . This tendency is confirmed by a previous experimental dataset from [26] (also included in Fig. 6b), which also falls below numerical predictions.…”

Section: Density/stiffness Variations and Surface Swelling Resultssupporting

confidence: 86%

Softening the ultra-stiff: Controlled variation of Young’s modulus in single-crystal diamond by ion implantation

et al. 2016

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Section: Density/stiffness Variations and Surface Swelling Resultssupporting

confidence: 86%

Softening the ultra-stiff: Controlled variation of Young’s modulus in single-crystal diamond by ion implantation

et al. 2016

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“…Therefore, in our case we infer a similar lattice expansion of 0.6% in the surface layer for the highest fluence. Volume expansion after ion implantation has been reported before and explained by the amorphization of the material and the formation of vacancies and interstitials [44][45][46]. Our results indicate that the lattice expansion is more important for the surface layers, where damage and amorphization are smaller.…”

Section: Raman Spectrasupporting

confidence: 74%

Lattice damage in 9-MeV-carbon irradiated diamond and its recovery after annealing

Agulló-Rueda

Gordillo

Ynsa

et al. 2017

Carbon

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We have studied the radiation damage in diamond as a function of layer depth upon self-ion implantation with 9-MeV carbon ions and its recovery after annealing at 1000 • C. Raman and photoluminescence spectra show substantial damage of the lattice, namely, amorphization, neutral vacancies, and interstitial defects. Damage is maximum in the stopping layer at a depth of 4 µm. After annealing there is some recovery of the lattice, but the residual damage increases with fluence, up to about 2 × 10 16 ions/cm 2. At this fluence the stopping layer becomes highly disordered and does not heal with annealing. Surprisingly, for higher fluence values, of about 5 × 10 16 ions/cm 2 , there is almost no residual damage. After full amorphization is reached, the layers appear to recrystallize by solid phase epitaxy (SPE), using the pristine diamond layers underneath as a template. These results prove that graphitization of diamond after annealing can be avoided in deeply buried layers, implanted at fluences much higher than expected. High fluences, in fact, can lead to high quality diamond layers. If SPE can be confirmed, it would have a great interest for diamond device applications, as it allows for higher doping levels. ion irradiation 9-MeV C ions micro-spectroscopy 10 μm stopping layer Figure 1: Scheme of the experimental procedure. A diamond crystal was implanted with 9-MeV 12 C 3+ ions at different fluences and then annealed at 1000 • C for 1 h. Optical microspectroscopy measurements were performed both after implantation and after annealing. The inset shows an actual transmission light micrograph of an implanted stripe as seen from the top sample surface (fluence 130 × 10 14 ions/cm 3).

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“…However, to perform post implant, anneal at 1600 °C is unusual (superficial damages are observed when annealing at this temperature). For that, samples #D and #E maximum annealing temperature were limited to 1300 °C, which is in the 1200–1400 °C range that some authors consider enough to convert diamond to graphite . Additionally, (100) face was used for the implantation process to reduce the graphitisation…”

Section: Methodsmentioning

confidence: 99%

Impact of Thermal Treatments in Crystalline Reconstruction and Electrical Properties of Diamond Ohmic Contacts Created by Boron Ion Implantation

Piñero

Villar

Araújo

et al. 2017

Physica Status Solidi (a)

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To obtain p-type doping of diamond through B ion implantation, thermal treatments are necessary to reconstruct the diamond lattice and to locate B atoms in substitutional lattice positions. The present contribution evaluates by STEM-EELS and CL spectroscopy the amorphisation of diamond lattice under the B þ bombardment and its subsequent reconstruction after the thermal treatment. In addition, TEM observations allowed localizing the boron spatial distribution. Carbon-related peaks of EELS spectroscopy shows a nearly complete recovery of the diamond lattice after thermal treatment. Indeed, at 1600 C, sp 2 /sp 3 ratio in implanted regions changes from 0.56 to 0.18 (0.15 value was measured before implantation). On the other hand, CL spectroscopy reveals how A-Band and free exciton emission peaks, which are quenched by B þ implantation, recover after annealing. Boron ion implantation was used to create ohmic contacts in two different diamond samples, treated with different annealing velocities. Crystalline reconstruction, evidenced by TEM data explains the related electric behaviour. Nanoscale evidences of amorphisation, lattice reconstruction and dopant activation are presented and discussed in this work.

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Mechanical stresses and amorphization of ion-implanted diamond

Cited by 24 publications

References 40 publications

Softening the ultra-stiff: Controlled variation of Young’s modulus in single-crystal diamond by ion implantation

Softening the ultra-stiff: Controlled variation of Young’s modulus in single-crystal diamond by ion implantation

Lattice damage in 9-MeV-carbon irradiated diamond and its recovery after annealing

Impact of Thermal Treatments in Crystalline Reconstruction and Electrical Properties of Diamond Ohmic Contacts Created by Boron Ion Implantation

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