Mechanism and Equivalent Circuit Model of Multielement Metal-Oxide Thin-Film Photodetectors

Abstract

In this paper, photodetector devices with a trilayer structure of p+-Si-substrate (p+-Si)/multielement metal-oxide thin film (MO)/indium tin oxide thin film (ITO) were built, and the associated possible mechanism was discussed. An equivalent circuit model for trilayer photodetectors based on the band structure and I–V characteristic was developed. The I–V characteristics and the equivalent circuit model of the photodetector based on the energy band structure were verified via HSPICE simulation and were investigated comprehensively. The accuracy of the simulation results was greater than 99%. This work paves the way for understanding the working mechanism as well as the potential application for optimizing device fabrication for multielement photodetectors.

CuBi2O4nanocrystals integrated with polyaniline nanobelt arrays for weak light photomultiplication type photodetector

“…New materials for detection and manipulation must be developed immediately to address this. 33,39,40 To solve the problems of high dark current and poor absorption efficiency, the photodetectors should use localized electron and photon manipulations. 37,41 Dark current can be efficiently suppressed using techniques such as electrical manipulations by ferroelectric, built-in, and gate electric elds.…”