Mechanism and experimental study of in situ metallization on the surface of silver ion conductive glass

Abstract

In situ metallization of Ag+ conductive glass was successfully achieved by applying electric and temperature fields to the glass to ensure the controlled migration of ions inside the glass. The transport and kinetic characteristics of Ag+ under the combined effect of electric field and temperature field were investigated by calculating and analyzing Ag+ diffusion coefficient. The correlations between ion transport and current were characterized with potential energy equations. The simulations and experiments of ion transport in the conducting glass were implemented, which revealed the mechanisms of ion transport and interfacial precipitation within the conducting glass. Further more, the existence of Ag+ deprivation layer was confirmed and it was clarified that the depth of the deprivation layer reached 30 µm under thermal polarization conditions of 60 V and 300°C. The microscopic morphology of in situ silver deposition layer was observed using SEM and TOF–SIMS. In addition, It was determined that the in situ metallization of conductive glass under the polarization condition of 60 V at 250°C was the best, and the thickness of deposited silver dendrites reached 1000 nm in the side of cathodically. This paper provides theoretical and experimental references for the optimization of the in situ metallization process for the ion conductive glass.