2004
DOI: 10.1088/1367-2630/6/1/052
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Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices

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Cited by 431 publications
(288 citation statements)
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“…The interest on this compound is thus mainly focused on understanding the role and the relative importance of the electron-electron and the electron-lattice interaction in driving the MIT. Despite the great experimental and theoretical efforts [2], the understanding of this transition is still far from being complete [3,4,5,6,7]. In the R phase the V atoms, each surrounded by an oxygen octahedron, are equally spaced along linear chains in the c-axis direction and form a body-centered tetragonal lattice.…”
Section: Pacs Numbersmentioning
confidence: 99%
“…The interest on this compound is thus mainly focused on understanding the role and the relative importance of the electron-electron and the electron-lattice interaction in driving the MIT. Despite the great experimental and theoretical efforts [2], the understanding of this transition is still far from being complete [3,4,5,6,7]. In the R phase the V atoms, each surrounded by an oxygen octahedron, are equally spaced along linear chains in the c-axis direction and form a body-centered tetragonal lattice.…”
Section: Pacs Numbersmentioning
confidence: 99%
“…Richardson and Coath, 1998;Jiang and Carr, 2004;Wang et al, 2006) or electrical switches development (thin films and single-crystal structures) (e.g. Guzman et al, 1996;Stefanovich et al, 2000;Qazilbash et al, 2007;Kim et al, 2004), but the functioning of the proposed devices is based mainly on the thermal activation of the MIT transition which is far more slow than the purely electric or optical-activated ones (massive charge injection or optical activation). The very few reports concerning the possible integration of VO 2 thin films in devices and systems for RF and millimetre wave applications concerns their dielectric properties in this domains (Hood & DeNatale, 1991), the fabrication of submillimeter -wave modulators and polarizers (Fan et al, 1977), of thermally controlled coplanar microwave switches (Stotz et al, 1999) and numerical simulations of VO 2 -based material switching operation in the RF-microwave domain (Dragoman et al, 2006).…”
Section: Vo 2 Materials Properties and Applicationsmentioning
confidence: 99%
“…In VO 2 valence band holes in the low T state can trigger the transition since they weaken the net electron-electron repulsion. The critical hole value is estimated to be 0.018% [15] and can be achieved by raising T, doping, band bending, and with optical pumping [9,10].…”
Section: Electrical and Optical Propertiesmentioning
confidence: 99%