Mechanism for Disorder on GaAs(001)-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mo>(</mml:mo><mml:mn>2</mml:mn><mml:mo>×</mml:mo><mml:mn>4</mml:mn><mml:mo>)</mml:mo></mml:math>Surfaces

Avery, A. R.; Goringe, C. M.; Holmes, D. M.; Sudijono, J. L.; Jones, T.S.

doi:10.1103/physrevlett.76.3344

Cited by 77 publications

(46 citation statements)

References 12 publications

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“…Assuming that InAs(001)-(2ϫ4) has the same structure as the analogous GaAs reconstruction, the top two layers of the surface are 3 4 ML of In covered by 1 2 ML of As. [31][32][33][34] Converting this surface to a c(2ϫ6) structure composed of 1 ML of In ϩ 2 3 ML of Sb ͑or SbϩAs) would lead to a surface deficient in In by 1 4 ML, i.e., a surface with 25% vacancies. Note that such multilayer formation occurs for apparently similar reasons when Ge is deposited on GaAs͑001͒.…”

Section: ϫ2mentioning

confidence: 99%

Structure of InAs/AlSb/InAs resonant tunneling diode interfaces

Nosho¹

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We have used in situ plan-view scanning tunneling microscopy to study the surfaces and interfaces within an InAs/AlSb/InAs resonant tunneling diodelike structure grown by molecular beam epitaxy. The nanometer and atomic-scale morphologies of the surfaces have been characterized following a number of different growth procedures. When InAs(001)-(2ϫ4) is exposed to Sb 2 a bilayer surface is produced, with 1 monolayer ͑ML͒ deep ͑3 Å͒ vacancy islands covering approximately 25% of the surface. Both layers exhibit a (1ϫ3)-like reconstruction characteristic of an InSb-like surface terminated with Ͼ1 ML Sb, indicating that there is a significant amount of Sb on the surface. When 5 ML of AlSb is deposited on an Sb-terminated InAs surface, the number of layers observed on each terrace increases to three. Growth of an additional 22 ML of InAs onto the AlSb layer, followed by a 30 s interrupt under Sb 2 , further increases the number of surface layers observed. The root-mean-square roughness is found to increase at each subsequent interface; however, on all the surfaces the roughness is р2 Å. The surface roughness is attributed to a combination of factors, including reconstruction-related stoichiometry differences, kinetically limited diffusion during growth, and lattice-mismatch strain. Possible methods to reduce the roughness are discussed.

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Section: ϫ2mentioning

confidence: 99%

Structure of InAs/AlSb/InAs resonant tunneling diode interfaces

Nosho¹

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…Tight-binding calculations 45 " 47 have indicated that if it is possible to raise the arsenic chemical potential enough to force a small additional amount of excess arsenic (0.03-0.25 monolayers) to adsorb on the ß2(2x4) surface, then it would be energetically favorable for the surface to reconstruct so that the excess arsenic could be accommodated as single arsenic atoms in the trenches, each sitting beside a kink. In other words, if it is possible to raise the arsenic chemical potential enough, the formation energy for arsenic-decorated kinks could go to zero, resulting in a phase transition to a new surface structure, characterized by a high concentration of kinks in the trench and mountain rows.…”

Section: Kink Formation and Interaction Of Kinks With Excess Arsenicmentioning

confidence: 99%

Theoretical Investigation of Point Defects and Defect Complexes in Low-Temperature-Grown GaAs

Morgan¹

1999

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“…One of the interesting problem is how the surface reconstruction affects on atomic structures of the quantum objects. For instance, in some growth conditions, the GaAs (001) surface appeared to be (2 x 4) reconstructed [3], and (31 1)A surface appeared to be corrugated [2] or (1 x 8) reconstructed [4]. Recently, it was observed, that after deposition of GaAs submonolayer cover on (001)-(2 x 4) reconstructed GaAs surface, the GaAs islands, containing 6 or less Ga dimers, are formed [5].…”

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Interface reconstruction in GaAs/AlAs ultrathin superlattices grown on (311) and (001) surfaces

Efremov

Володин

Sachkov³

et al. 2001

Nanotechnology

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Phonon spectra of GaAs/AlAs superlattices (SLs) grown on (311)A, B and (001) surfaces were studied using Raman spectroscopy. The thickness of GaAs layers were varied from 1 to 10 monolayers (MLs); the thickness of AlAs barriers were 8 ML in the (311) direction. Different polarization geometries of Raman scattering were applied to study LO and TO modes. The splitting of TOx (atoms displace in the direction [011̄] perpendicular to the facets on the (311)A surface) and TOy (atoms displace in the [2̄33] direction parallel to the facets) modes was observed for (311)A SLs. In the case of (311)B SLs no splitting was observed. The phonon anisotropy of (311)A SLs may be indirect evidence of anisotropic structure of quantum objects formed on the (311)A GaAs surface. In the Raman spectra of the SL containing GaAs submonolayers (SML) grown on a (2×4) reconstructed (100) surface, Raman peaks corresponding to additional lateral confinement of LO phonons were observed. The calculations of Raman spectra were carried out using the Born-von-Karman model (taking into account Coulomb interaction in the rigid-ion model) and the Wolkenstein bond polarizability model. According to the calculations, the interface structure strongly influences the Raman spectra of GaAs/AlAs heterostructures containing GaAs SML.

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Mechanism for Disorder on GaAs(001)-(2×4)Surfaces

Cited by 77 publications

References 12 publications

Structure of InAs/AlSb/InAs resonant tunneling diode interfaces

Structure of InAs/AlSb/InAs resonant tunneling diode interfaces

Theoretical Investigation of Point Defects and Defect Complexes in Low-Temperature-Grown GaAs

Interface reconstruction in GaAs/AlAs ultrathin superlattices grown on (311) and (001) surfaces

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