1997
DOI: 10.1016/s0168-583x(96)01169-x
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Mechanism for ion beam passivation of copper surfaces

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Cited by 8 publications
(17 citation statements)
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“…Cleaning of the wafer surface is an important step, as a clean metal surface is needed to ensure coverage of the metal surface with the surface-activating agent. XPS analyses of the surface showed that this cleaning process removed adventitious carbon . Wafer samples were heated at 45 °C during deposition of copper films.…”
Section: Resultsmentioning
confidence: 99%
“…Cleaning of the wafer surface is an important step, as a clean metal surface is needed to ensure coverage of the metal surface with the surface-activating agent. XPS analyses of the surface showed that this cleaning process removed adventitious carbon . Wafer samples were heated at 45 °C during deposition of copper films.…”
Section: Resultsmentioning
confidence: 99%
“…However, in natural silicon ( Nat Si), the nuclear spin I = 1/2 9 29 Si isotope with abundance 4.68% 10 acts to limit electron spin qubit coherence times in donor and dot architectures. This is due to the dipole-induced 29 Si nuclear spin flip-flops within the 29 Si nuclear spin bath surrounding the electron spin [11][12][13] . In isotopically enriched 28 Si (I = 0), electron spin qubit coherence times can be significantly increased.…”
mentioning
confidence: 99%
“…In isotopically enriched 28 Si (I = 0), electron spin qubit coherence times can be significantly increased. For example, a substrate with 800 ppm residual 29 Si has led to a factor of 5000 improvement in the electron pure dephasing time ðT Ã 2e Þ as compared to Nat Si 6 . The enrichment method presented here depletes both 29 Si and 30 Si to provide a matrix composed predominantly of a single isotope.…”
mentioning
confidence: 99%
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