Mechanism for the molecular effect in Si bombarded with clusters of light atoms

Titov, A.I.; Azarov, Alexander; Nikulina, L.M.; Kucheyev, S. O.

doi:10.1103/physrevb.73.064111

Cited by 37 publications

(35 citation statements)

References 28 publications

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“…Not surprisingly, a τ of 6 ms is in the range of previous estimates (10 −10 − 10 2 s). [8][9][10][11][12][13] It is, however, two orders of magnitude smaller than the characteristic time constant of the ion-beam-induced recrystallization process in Si at elevated temperatures studied by Linnros and co-workers. 16 This is consistent with an expectation that τ depends both on material properties and irradiation conditions (i.e., substrate temperature; ion dose; the maximum dose rate; and the average density of collision cascades, 29 This pulsed-beam method could also be applied to study defect dynamics in technologically relevant materials other than Si.…”

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confidence: 78%

“…3,5,7 Values of τ are, however, largely unknown even for arguably the best studied material system -single crystalline Si at room temperature (RT). Indeed, current estimates of τ for Si at RT range from ∼ 10 −10 to 10 2 s, [8][9][10][11][12][13] inconsistency of 12 orders of magnitude! Such a large scatter in the estimates of τ is related to the fact that calculations and measurements of τ are not straightforward.…”

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confidence: 99%

“…about the explicit defect interaction processes. [12][13][14] Spatial and temporal information can be separated in experiments with pulsed ion beams.…”

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confidence: 99%

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Pulsed Ion Beam Measurement of the Time Constant of Dynamic Annealing in Si

et al. 2012

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Under ion irradiation, all crystalline materials display some degree of dynamic annealing when defects experience evolution after the thermalization of collision cascades. The exact time scales of such defect relaxation processes are, however, unknown even for Si at room temperature. Here, we use a pulsed ion-beam method to measure a characteristic time constant of dominant dynamic annealing processes of about 6 ms in Si bombarded at room temperature with 500 keV Ar ions.

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Pulsed Ion Beam Measurement of the Time Constant of Dynamic Annealing in Si

et al. 2012

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“…Previous experiments for different materials have revealed that the efficiency of the formation of stable damage generally increases with increasing m 6891013161718193132. However, even the qualitative behavior is non-trivial and depends strongly on the material and irradiation conditions such as Φ, F , and T .…”

Section: Resultsmentioning

confidence: 98%

Effects of collision cascade density on radiation defect dynamics in 3C-SiC

Aji

Wallace

Kucheyev

2017

Sci Rep

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Effects of the collision cascade density on radiation damage in SiC remain poorly understood. Here, we study damage buildup and defect interaction dynamics in 3C-SiC bombarded at 100 °C with either continuous or pulsed beams of 500 keV Ne, Ar, Kr, or Xe ions. We find that bombardment with heavier ions, which create denser collision cascades, results in a decrease in the dynamic annealing efficiency and an increase in both the amorphization cross-section constant and the time constant of dynamic annealing. The cascade density behavior of these parameters is non-linear and appears to be uncorrelated. These results demonstrate clearly (and quantitatively) an important role of the collision cascade density in dynamic radiation defect processes in 3C-SiC.

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“…40 However, for ion irradiation conditions, where dynamic annealing takes place, an alternate mechanism for molecular effect has been proposed. Non-linearity in defect clustering, with increase in density of collision cascades 30 has been suggested as the reason for molecular effect. Under present implantation conditions, due to dynamic annealing one can expect non-linearity in defect clustering due to an increase in density of collision cascades.…”

Section: Simulation Studies To Evaluate the Dissociation Of Al 3 And mentioning

confidence: 99%

Nonlinear effects in defect production by atomic and molecular ion implantation

David

Anto

Dholakia

et al. 2015

Journal of Applied Physics

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Articles you may be interested inChemical effect of Si+ ions on the implantation-induced defects in ZnO studied by a slow positron beam J. Appl. Phys. 113, 043506 (2013); 10.1063/1.4789010 Fluence, flux, and implantation temperature dependence of ion-implantation-induced defect production in 4H-SiC J. Appl. Phys. 97, 033513 (2005); 10.1063/1.1844618 Identification of vacancy-oxygen complexes in oxygen-implanted silicon probed with slow positrons J. Appl. Phys. 95, 3404 (2004); 10.1063/1.1652241 Vacancy-related defect distributions in 11 B -, 14 N -, and 27 Al -implanted 4H-SiC: Role of channelingThis report deals with studies concerning vacancy related defects created in silicon due to implantation of 200 keV per atom aluminium and its molecular ions up to a plurality of 4. The depth profiles of vacancy defects in samples in their as implanted condition are carried out by Doppler broadening spectroscopy using low energy positron beams. In contrast to studies in the literature reporting a progressive increase in damage with plurality, implantation of aluminium atomic and molecular ions up to Al 3 , resulted in production of similar concentration of vacancy defects. However, a drastic increase in vacancy defects is observed due to Al 4 implantation. The observed behavioural trend with respect to plurality has even translated to the number of vacancies locked in vacancy clusters, as determined through gold labelling experiments. The impact of aluminium atomic and molecular ions simulated using MD showed a monotonic increase in production of vacancy defects for cluster sizes up to 4. The trend in damage production with plurality has been explained on the basis of a defect evolution scheme in which for medium defect concentrations, there is a saturation of the as-implanted damage and an increase for higher defect concentrations. V C 2015 AIP Publishing LLC. [http://dx.

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Mechanism for the molecular effect in Si bombarded with clusters of light atoms

Cited by 37 publications

References 28 publications

Pulsed Ion Beam Measurement of the Time Constant of Dynamic Annealing in Si

Pulsed Ion Beam Measurement of the Time Constant of Dynamic Annealing in Si

Effects of collision cascade density on radiation defect dynamics in 3C-SiC

Nonlinear effects in defect production by atomic and molecular ion implantation

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