Mechanism of Aging in Polycrystalline BaTiO<sub>3</sub>

Ikegami, Seiji; Ueda, Ichiro

doi:10.1143/jpsj.22.725

Cited by 90 publications

(36 citation statements)

References 17 publications

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“…PT is a perovskite ferroelectric ceramic at room temperature with a transition (Curie) temperature of 490°C [96,97]. It has many useful properties in comparison to other piezoelectric materials [98], a low aging rate of the dielectric constant [99], and a low value of dielectric constant [100]. Therefore, PbTiO 3 shows great promise as a stable pyroelectric [101] and piezoelectric material for high temperature or high frequency applications [102].…”

Section: Lead Titanate Glass Ceramicsmentioning

confidence: 99%

Dielectric behavior of perovskite glass ceramics

Yadav

Gautam

2014

J Mater Sci: Mater Electron

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The recent developments of energy storage devices are concerned with larger energy storage ability, low loss and good temperature stability. It has a great technological importance in engineering science. The dielectric materials like ceramics and glass ceramics have great interest in electronic ceramic industry due to above concern. The ceramic dielectrics are used as a capacitive element in electronic circuits. The perovskite glass ceramics have very high dielectric constant and low dielectric loss. The high dielectric constant in glass ceramics is attributed to space charge polarization. In order to produce glass ceramics of high dielectric constant, barium titanate glass ceramics is the first discovered ferroelectric perovskite. In this review article, we are summarizing the dielectric behavior of perovskite glass ceramics such as

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Section: Lead Titanate Glass Ceramicsmentioning

confidence: 99%

Dielectric behavior of perovskite glass ceramics

Yadav

Gautam

2014

J Mater Sci: Mater Electron

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“…Here, we need to recall that the ferroelectric fatigue is also affected by the internal stress. [16][17][18][19][20] Jiang, Subbarao, and Cross found that rhombohedral ferroelectrics showed less fatigue than tetragonal ferroelectrics. The stress required for rhombohedral deformation was smaller than that for tetragonal deformation by Ϸ50%.…”

Section: Introductionmentioning

confidence: 99%

Physical mechanism for orientation dependence of ferroelectric fatigue in Pb(Zn1∕3Nb2∕3)O3-5%PbTiO3 crystals

Lee

Hong

2004

Journal of Applied Physics

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The underlying phenomenology of the crystallographic orientation dependence on ferroelectric fatigue behavior was investigated in rhombohedral Pb(Zn1∕3Nb2∕3)O3-5%PbTiO3 (PZN-5PT) crystals. It was recently found that an electric field (E field) application along the ⟨001⟩ direction of PZN-5PT crystal did not induce the fatigue to 105cycles of bipolar electric field cycling (switching), while the ferroelectric fatigue became evident from 103cycles of polarization switching along the ⟨111⟩ direction. In this study, the dependence of ferroelectric fatigue on the crystal orientation is explained by changes in internal stress, switching mechanisms, and domain configuration. The magnitude of the in-plane tensile strain was a maximum during a domain switching in ⟨111⟩ oriented crystals, resulting in the suppressed motion of domain boundaries in ⟨111⟩ oriented crystals. In addition to the stress, differences in domain switching mechanisms and domain boundary density for ⟨001⟩ and ⟨111⟩ oriented crystals contributed to the orientation dependence of ferroelectric fatigue. Sideways domain growth became dominant and domain width increased when the E field was applied along the ⟨111⟩ direction. Sideways domain growth of ⟨111⟩ oriented crystal swept oxygen vacancies of the domains during the consecutive switching process, leading to the effective accumulation of oxygen vacancies at the domain boundaries. Smaller domain boundary densities found in ⟨111⟩ oriented crystals, in comparison to ⟨100⟩ oriented crystals, also contributed to the increase in the density of accumulated oxygen vacancies at domain boundaries after sweeping oxygen vacancies of the domains, due to the impact of increased E-field cycling and cumulative switching. High in-plane tensile stress and a high concentration of oxygen vacancies at the domain boundaries due to sideways growth and small domain boundary density were suggested to pin the movement of domain boundaries and enhance the fatigue in ⟨111⟩ oriented crystals.

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“…To understand the reduction of an increase of the stress in plane would be necessary. The domain-wall-related models in ferroelectric bulk ceramics [8][9][10][11] and in PZT thin films 12 interpret the decrease of with a reduction of the domain-wall contributions to the dielectric constant. The domain walls are stabilized in their position and, hence, less movable by the external field.…”

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confidence: 99%

Interface-related decrease of the permittivity in PbZrxTi1−xO3 thin films

Grossmann

Lohse

Bolten

et al. 2002

Applied Physics Letters

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In ferroelectric thin films, a decrease of the permittivity is observed obeying a logarithmic time dependence. In the literature, a similar effect has been reported for ferroelectric single crystals and ceramics, which is referred to as ferroelectric aging, and different models have been proposed to explain this phenomenon. In this letter, ferroelectric aging of PbZrxTi1−xO3 thin films is studied as a function of dopant types and concentrations as well as the temperature. The results clearly show that the traditional models for the aging mechanism of ferroelectric single crystals and ceramics are not applicable. Based on these results, a mechanism is proposed which explains the decrease of the dielectric constant in ferroelectric thin films by the growth of a thin surface layer with suppressed ferroelectric properties in the course of aging.

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Mechanism of Aging in Polycrystalline BaTiO₃

Cited by 90 publications

References 17 publications

Dielectric behavior of perovskite glass ceramics

Dielectric behavior of perovskite glass ceramics

Physical mechanism for orientation dependence of ferroelectric fatigue in Pb(Zn1∕3Nb2∕3)O3-5%PbTiO3 crystals

Interface-related decrease of the permittivity in PbZrxTi1−xO3 thin films

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Mechanism of Aging in Polycrystalline BaTiO3

Cited by 90 publications

References 17 publications

Dielectric behavior of perovskite glass ceramics

Dielectric behavior of perovskite glass ceramics

Physical mechanism for orientation dependence of ferroelectric fatigue in Pb(Zn1∕3Nb2∕3)O3-5%PbTiO3 crystals

Interface-related decrease of the permittivity in PbZrxTi1−xO3 thin films

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Mechanism of Aging in Polycrystalline BaTiO₃