Phase change materials,
with more than one reflectance and resistance
states, have been a subject of interest in the fields of phase change
memories and nanophotonics. Although most current research focuses
on rather complex phase change alloys,
e.g.
, Ge2Sb2Te5,
recently, monatomic antimony thin films have aroused a lot of interest.
One prominent attractive feature is its simplicity, giving fewer reliability
issues like segregation and phase separation. However, phase transformation
and crystallization properties of ultrathin Sb thin films must be
understood to fully incorporate them into future memory and nanophotonics
devices. Here, we studied the thickness-dependent crystallization
behavior of pulsed laser-deposited ultrathin Sb thin films by employing
dynamic ellipsometry. We show that the crystallization temperature
and phase transformation speed of as-deposited amorphous Sb thin films
are thickness-dependent and can be precisely tuned by controlling
the film thickness. Thus, crystallization temperature tuning by thickness
can be applied to future memory and nanophotonic devices. As a proof
of principle, we designed a heterostructure device with three Sb layers
of varying thicknesses with distinct crystallization temperatures.
Measurements and simulation results show that it is possible to address
these layers individually and produce distinct and multiple reflectance
profiles in a single device. In addition, we show that the immiscible
nature of Sb and GaSb could open up possible heterostructure device
designs with high stability after melt-quench and increased crystallization
temperature. Our results demonstrate that the thickness-dependent
phase transformation and crystallization dynamics of ultrathin Sb
thin films have attractive features for future memory and nanophotonic
devices.