Mechanism of anomalous photoinduced transient current peak in amorphous silicon thin-film transistor

Abstract

The photoinduced transient current from an amorphous silicon thin-film transistor is computed and the mechanism described in terms of trap-state filling dynamics. The direction of the current flow and the location of the transient peak depends strongly on the distributions of donorlike and acceptorlike trap states in the neighborhood of the dark Fermi level. We show that the transient current can flow in the same direction as in the crystalline transistor, as well as in the opposite direction. There is also an interesting cross-over behavior in which the transient current flows out of the drain terminal as a pulse of positive charge, and then immediately reverses its direction. There is a broadening effect of the transient peak by a simultaneous switch on of the gate voltage. The transient peak typically occurs at 10−4 s and an example is provided. The transient current can be greatly diminished by switching the gate voltage long before illumination, or by doping the channel either partially or completely.