Mechanism of carbon incorporation in MOCVD GaAs

High Purity GaAs Nanowires Free of Planar Defects: Growth and Characterization

“…[13] We also note that, in studies of conventional planar epitaxy, the (111)B surface orientation exhibits the highest rate of carbon incorporation. [46] It is not unexpected, therefore, that these [111]B-oriented nanowires exhibit carbon impurity incorporation.…”

“…[46,49] In Figure 5 we compare spectra for nanowires grown with various V/III ratios. These spectra were obtained under low excitation power (90 mW) to avoid saturation of the DAP peak.…”

Numerical Study of a Three-Dimensional Chemical Vapor Deposition Reactor with Detailed Chemistry

“…This latter result was also observed experimentally by using photolurange, the process becomes mass diffusion limited and is fairly insensitive to the susceptor temperature. At high minescence [44].…”

Progress Report for the Joint Services Electronics Program

“…Growths using redistilled TMGa [21] were found to have lower C acceptor concentrations [21]; thus, these hydrocarbon residues may be a source of carbon. The residual C acceptor concentration in GaAs has been found to be dependent on several growth parameters: V/III ratio [22][23][24][25][26][27], substrate temperature [23][24][25][26][27], substrate orientation [26,27], and the reactor pressure (28]. These are all important pieces of information needed to understand the sources and incorporation mechanisms of residual C; however, a full understanding of C incorporation has proved difficult based on these facts alone.…”