Mechanism of charge transfer in injection photodiodes based on the In-n +-CdS-n-CdS x Te1 − x -p-Zn x Cd1 − x Te-Mo structure

Mirsagatov, Sh. A.; Leiderman, A. Yu.; Ataboev, O. K.

doi:10.1134/s1063783413080192

Cited by 7 publications

(1 citation statement)

References 9 publications

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“…For the heterojunction with a Zn 0.6 Mg 0.4 O film, the current-voltage characteristics fit to the MG law both in the dark and under illumination (see Figure 10c). These observations suggest that the investigated heterojunctions work at forward bias as injection photodiodes [53,54].…”

Section: Resultsmentioning

confidence: 65%

Band tail state related photoluminescence and photoresponse of ZnMgO solid solution nanostructured films

Morari¹,

Pantazi²,

Curmei³

et al. 2020

Beilstein J. Nanotechnol.

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A series of Zn1− x Mg x O thin films with the composition range x = 0.00–0.40 has been prepared by sol–gel spin coating on Si substrates with a post-deposition thermal treatment in the temperature range of 400–650 °C. The morphology of the films was investigated by scanning electron microscopy and atomic force microscopy while their light emission properties were studied by photoluminescence spectroscopy under excitation at 325 nm. It was found that annealing at 500 °C leads to the production of macroscopically homogeneous wurtzite phase films, while thermal treatment at higher or lower temperature results in the degradation of the morphology, or in the formation of ZnO particles embedded into the ZnMgO matrix, respectively. Local compositional fluctuations leading to the formation of deep band tails in the gap were deduced from photoluminescence spectra. A model for the band tail distribution in the bandgap is proposed as a function of the alloy composition. Thin films were also prepared by aerosol spray pyrolysis deposition using the same sol–gel precursors for the purpose of comparison. The prepared films were tested for photodetector applications.

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Section: Resultsmentioning

confidence: 65%

Band tail state related photoluminescence and photoresponse of ZnMgO solid solution nanostructured films

Morari¹,

Pantazi²,

Curmei³

et al. 2020

Beilstein J. Nanotechnol.

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Effect of temperature on the current transfer mechanism in the reverse I–V characteristics of the n-CdS/i-CdS_xTe1−x/p-CdTe heterostructure

Achilov

Kabulov

Utamuradova³

et al. 2023

Mod. Phys. Lett. B

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In this work, we study the influence of the temperature on the mechanism of current transfer in the reverse branch of the current–voltage (I–V) characteristics of n-CdS/p-CdTe heterostructures. The study of the heterostructure, using the technique of on energy-dispersive X-ray analysis, showed that a layer of CdSxTe[Formula: see text] is formed at the boundary of the heterojunction with a varying composition, being equal [Formula: see text] from the side of CdS and [Formula: see text] from the CdTe side. In the studied range of the temperatures and bias voltage, the current-voltage characteristics are described well by a power law [Formula: see text], where the exponent [Formula: see text] changes with the temperature and voltage. Under the influence of the temperature and charge carrier concentration, the mechanism of current transfer in the structure changes from exclusion ([Formula: see text]) to ohmic ([Formula: see text]), and then goes to injection ([Formula: see text]). The inhomogeneous intermediate CdSxTe[Formula: see text] i-layer at the boundary of the n-CdS/p-CdTe heterostructure is characterized by the presence of metastable states that rearrange at high temperatures and certain charge carrier concentrations. As a result of this, the exclusion slows down and electrons are injected from the rear molybdenum contact.

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Charge Transport Mechanism in p--Si--n--(Si2)1--x(CdS)x Semiconductor Structures

Zaynabidinov

Madaminov

2020

HoBMSTU.SNS

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The paper shows that it is possible to use liquid phase epitaxy to obtain single-crystal substitutional solid solution p--Si--n--(Si2)1--x(CdS)x (0 ≤ x ≤ 0,01) on silicon substrates from Sn--Si--CdS solution melt in a palladium-purified hydrogen atmosphere. The manufacturing conditions resulting in perfect epitaxial layers with mirror surfaces exhibiting the best parameters are as follows: crystallization start temperature of 1100 °С; forced cooling rate of 1 degree/min. The epitaxial films obtained feature a thickness of 20 µm and the n conductivity type, specific resistances being 0.018 Ω·cm. Investigation results concerning charge transfer mechanisms in p--Si--n--(Si2)1--x(CdS)x structures at room temperatures show that the forward current--voltage characteristic consists of several characteristic segments, and there are various mechanisms that drive charge transfer processes. At low current densities, the increase in current is due to growing concentration of injected carriers on account of simple local centres; at high densities, it is due to recombination processes in compound complexes inside which electron exchange takes place. This fact is what proves that the structure under consideration displays better rectifying properties with increasing voltage. We determined that these epitaxial films of (Si2)1--x(CdS)x (0 ≤ х ≤ 0,01) solid solutions are promising materials for high-current rectifier diodes

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Mechanism of charge transfer in injection photodiodes based on the In-n +-CdS-n-CdS x Te1 − x -p-Zn x Cd1 − x Te-Mo structure

Cited by 7 publications

References 9 publications

Band tail state related photoluminescence and photoresponse of ZnMgO solid solution nanostructured films

Band tail state related photoluminescence and photoresponse of ZnMgO solid solution nanostructured films

Effect of temperature on the current transfer mechanism in the reverse I–V characteristics of the n-CdS/i-CdS_xTe1−x/p-CdTe heterostructure

Charge Transport Mechanism in p--Si--n--(Si2)1--x(CdS)x Semiconductor Structures

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Mechanism of charge transfer in injection photodiodes based on the In-n +-CdS-n-CdS x Te1 − x -p-Zn x Cd1 − x Te-Mo structure

Cited by 7 publications

References 9 publications

Band tail state related photoluminescence and photoresponse of ZnMgO solid solution nanostructured films

Band tail state related photoluminescence and photoresponse of ZnMgO solid solution nanostructured films

Effect of temperature on the current transfer mechanism in the reverse I–V characteristics of the n-CdS/i-CdSxTe1−x/p-CdTe heterostructure

Charge Transport Mechanism in p--Si--n--(Si2)1--x(CdS)x Semiconductor Structures

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Effect of temperature on the current transfer mechanism in the reverse I–V characteristics of the n-CdS/i-CdS_xTe1−x/p-CdTe heterostructure