Mechanism of copper chemical vapor deposition from copper dipivaloylmethanate in hydrogen

Abstract

Mn 1 -x å x Se (M = Ti, V, Fe, Co) solid solutions are prepared by solid-state reactions and high-pressure synthesis (7 GPa, 1600 K). All of the solid solutions have a cubic (NaCl) structure, and their lattice parameter decreases with increasing solute concentration. The magnetic susceptibility of the solid solutions is measured from 77 to 900 K by the Faraday method. Below 130-150 K, the solid solutions undergo antiferromagnetic ordering.

Effect of Reaction Products on the Kinetics of Copper Dipivaloylmethanate Reduction to Copper

“…(1) with the equation for the rate of copper deposition without CO [10] in the Arrhenius model, we obtain for the difference in apparent activation energy between the processes under consideration (2) where E a CO is the apparent activation energy of deposition in the presence of CO and Q CO is the differential heat of CO adsorption. Using the experimentally determined values E a = 27 ± 5 kJ/mol [10] and E a CO = 46 ± 8 kJ/mol, we obtain from Eq. (2) that the differential heat of CO adsorption in the system under consideration is Q CO = 19 ± 13 kJ/mol.…”

“…4) indicates that adsorbed water molecules play a key role in the formation of [Cu(dpm ](ads) and (dpm (ads) radicals [3,4].…”

“…The experimental setup, procedure, and optimal conditions for kinetically limited Cu deposition were described elsewhere [3,4,10]. Clearly, since I -III are unstable they are unsuitable as volatile precursors.…”

“…The substrate (polished glass-ceramic plate) temperature was varied from 200 to 350 ° C. The Cu(dpm) 2 partial pressure (4 Pa) and H 2 flow rate (12 l/h) were the same in all deposition runs and corresponded to the optimal parameters of kinetically limited Cu deposition [10].…”

“…The addition of H(dpm) was shown to reduce the apparent activation energy of the process to 10 ± 5 kJ/mol and to raise the deposition rate of Cu in the temperature range 250-310 ° C [3,4]. As reported by Griffin and Haverick [5], the introduction of H 2 O vapor into a system containing copper(II) hexafluoroacetylacetonate, Cu(hfac) 2 , accelerates the Cu deposition rate.…”