2001
DOI: 10.1103/physrevb.64.125313
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Mechanism of electron-irradiation-induced recrystallization in Si

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Cited by 36 publications
(32 citation statements)
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“…Crystalline phases have lower internal energy as compared to amorphous configurations and therefore if the relative amount of elements approaches the stoichiometry of a stable phase, the likelihood of the restructuration process ending in the formation of a crystalline phase is high. In fact, this kind of athermal crystallization driven by the action of an electron beam has been extensively documented2021222324. Electron beams can also lead to limited heating.…”
Section: Discussionmentioning
confidence: 98%
“…Crystalline phases have lower internal energy as compared to amorphous configurations and therefore if the relative amount of elements approaches the stoichiometry of a stable phase, the likelihood of the restructuration process ending in the formation of a crystalline phase is high. In fact, this kind of athermal crystallization driven by the action of an electron beam has been extensively documented2021222324. Electron beams can also lead to limited heating.…”
Section: Discussionmentioning
confidence: 98%
“…One may stand out: femtosecond laser-induced damage, ablation and sputtering induced by femtosecond laser pulses, [12][13][14][15][16][17][18] amorphization and recrystallization by low-energy electron irradiation, 19,20 and other related physicochemical effects as radiation-enhanced diffusion and clustering, 21,22 and radiation-induced electrical degradation. 23 From the technological side electronic damage should have a relevant impact on the behavior of dielectric ͑window͒ materials in fusion reactor technologies.…”
Section: Introductionmentioning
confidence: 99%
“…This kind of energy transfer does not normally lead to atom displacements but may damage the target due to beam-stimulated local chemical reactions. [108][109][110][111] The cross sections of both nuclear and electron scattering decreases with increasing electron energy. Both electron and ion beams can be focused onto an area of several nanometers ͑and even down to 0.6 Å in some TEMs͒, which makes it possible to create defects in predetermined areas of the sample.…”
Section: A Production Of Defects In Bulk Targetsmentioning
confidence: 99%