Mechanism of flatband voltage roll-off studied with Al2O3 film deposited on terraced oxide

Abstract

Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors

Optimizing ALD HfO2 for Advanced Gate Stacks with Interspersed UV and Thermal Treatments- DADA and MDMA Variations, Combinations, and Optimization

“…This type of Vfb roll-off has been observed previously. (24)(25)(26)(27)(28) We see no discernable effect on Vfb rolloff from the RTUVO treatments used during this study, other than what can reasonably be attributed to the observed interface layer growth during DUDU processing. Thus, we conclude that RTUVO treatments have little effect on the nature of the HfO 2 /SiO 2 interface.…”

Composition and crystallography dependence of the work function: Experiment and calculations of Pt-Al alloys

“…Moreover, was found to be 0.4 V in this system 39 and in a similar configuration 24 corresponding to other reports in the literature. 62,63 After taking into account these components of Eq. (4), the intercepts of Fig.…”

Integrations and challenges of novel high-k gate stacks in advanced CMOS technology

“…Therefore, Capacitance-Voltage (C-V) measurements might increase the uncertainty in the estimation of V FB shift, which result in the errors of the dipole magnitude estimation. On the other hand, V FB roll-off effects can also be observed for low EOT region [369][370][371], the detail reason for such roll-off effects are not clear yet, including the charge effects, and the dipole strength changes. Such deficiencies mean that the announced dipole models are not well established and need further improvement.…”