Mechanism of Formation and Physical Classification of the Grown-In Microdefects in Semiconductor Silicon

A Selective Review of the Simulation of the Defect Structure of Dislocation-Free Silicon Single Crystals

“…This assumption was confirmed in several experimental works [7,15]. In paper [44] we first theoretically proved the absence of recombination of intrinsic point defects at high temperatures and fast recombination at low temperatures.…”

“…The classification was developed taking into account the thermal conditions of growth and sign of deformation of the crystal lattice, caused by the defect (which is defined by us as the physical nature of the defect). Experimental results indicated the identity of the processes of defect formation in crystals of FZ-Si and CZ-Si [7]. This means that the classifications of grown-in microdefects in both types of crystals should also be identical [7].…”

“…Experimental results indicated the identity of the processes of defect formation in crystals of FZ-Si and CZ-Si [7]. This means that the classifications of grown-in microdefects in both types of crystals should also be identical [7].…”

“…It was found that (I+V)-microdefects begin to form in the FZ-Si with a diameter of 30 mm at rates growth between 6.0 ... 6.5 mm/min, while in CZ-Si with a diameter of 50 mm at rates growth between 1.5...1.8 mm/min [7]. It was found that in crystals of FZ-Si with a diameter of 30 mm at rate growth 6.0 mm / min the concentration of microdefects of interstitial and vacancy types are in the relation 4:1 [6].…”

“…Based on the synthesis of numerous experimental and theoretical research as the physical model we have developed the two-stage mechanism for the formation and transformation of grown-in microdefects ( or heterogeneous mechanism) [7,14]. This physical model on the experimentally and theoretically established fact the absence of recombination of intrinsic point defects near the crystallization front of the crystal is based [44].…”