Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface

Higashi, Y.; Takaishi, Riichiro; Kato, Koichi; Suzuki, Masatoshi; Nakasaki, Yasushi; Tomita, Mitsuhiro; Mitani, Yuichiro; Matsumoto, M.; Ogura, Shohei; Fukutani, Katsuyuki; Yamabe, Kikuo

doi:10.1016/j.microrel.2017.01.011

Cited by 11 publications

(10 citation statements)

References 32 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For the initial V CNP = −13 V, the density of protons estimated in SiO 2 within a thin layer is about ρ 0 = 8.75 × 10 19 cm –3 . It is in good agreement with the hydrogen concentration obtained by nuclear reaction analysis method . The detailed calculations are discussed in the Supporting Information.…”

Section: Resultssupporting

confidence: 85%

“…Third, it well-explains the asymmetric characteristic of PIH for positive and negative V BGH . Because the initial positive charges mostly locate within a few nanometers (denoted as L H + ≈ 8 nm) near the SiO 2 surface, , the allowed migration space for protons toward the interface of graphene/SiO 2 at positive V BGH is obviously much smaller than that toward the interface of Si/SiO 2 at negative V BGH (see Figure S8 in the Supporting Information).…”

Section: Resultsmentioning

confidence: 99%

“…It is in good agreement with the hydrogen concentration obtained by nuclear reaction analysis method. 26 The detailed calculations are discussed in the Supporting Information.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…The exact defect in SiO 2 contributing to the PIH has not been seriously discussed yet in the literature. ,, However, the defects in the bulk of SiO 2 have been intensively explored in terms of reliability of traditional silicon-based metal-oxide-semiconductor device. − Hydrogen is a ubiquitous impurity in oxides and strongly affects their electronic and structural properties. In silicon dioxide, hydrogen-related defects are responsible for a bunch of degradation process of SiO 2 -dielectric electronic devices. − For instance, hydrogen-complexed defects are believed to be responsible for the stress-induced leakage current in silica. , The electron spin resonance studies of defects in amorphous SiO 2 have suggested that hydrogen (in forms of H 2 or H 2 O) plays a key role on initializing intrinsic defects during a thermal treatment or irradiation. , The Si–O bond rupture is closely related to the presence of protonic species formed by hole trapping or by hydrogen ionization at the Si/SiO 2 interface. − Hydrogen in different forms (hydroxyl E′ and hydrogen bridge) is well-known as a defect passivator in amorphous SiO 2 . A photon-stimulated tunneling of electrons at the Si/SiO 2 and Si/SiC interfaces has been correlated with defects in SiO 2 with an energy level about 2.8 eV below the conduction band. , Therefore, it is reasonable to believe that a similar process should also happen at graphene/SiO 2 interface.…”

Section: Introductionmentioning

confidence: 99%

“…25−28 For instance, hydrogencomplexed defects are believed to be responsible for the stress-induced leakage current in silica. 25,26 The electron spin resonance studies of defects in amorphous SiO 2 have suggested that hydrogen (in forms of H 2 or H 2 O) plays a key role on initializing intrinsic defects during a thermal treatment or irradiation. 27,28 The Si−O bond rupture is closely related to the presence of protonic species formed by hole trapping or by hydrogen ionization at the Si/SiO 2 interface.…”

Section: ■ Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Photoinduced Hysteresis of Graphene Field-Effect Transistors Due to Hydrogen-Complexed Defects in Silicon Dioxide

Cao¹,

Liu²,

Zhang³

et al. 2019

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Photoinduced hysteresis (PIH) of graphene field-effect transistors (G-FETs) has attracted attention because of its potential in developing photoelectronic or nonvolatile memory devices. In this work, we focused on the role of SiO 2 dielectric layer on PIH, where G-FETs have only a SiO 2 dielectric layer. Adsorbates are effectively removed before the PIH test. The effects of laser wavelength, laser power density, and temperature on the PIH are systematically investigated. The PIH is significantly enhanced by increasing the hydrogen flow in a hydrogen-atmosphere device thermal annealing. This strongly suggests proton-related defects that play a key role. The pure electronic process for PIH is further ruled out by the significant dependence of the doping rate on the temperature. A mechanism of PIH based on proton generation after hole trapping at [O 3 Si−H] is proposed. The proposed mechanism is well-supported by our experimental data: (1) the observed threshold photon energy for PIH is between 2.76 and 2.34 eV, which is close to the energy barrier for [O 3 Si−H], releasing a proton. (2) No obvious carrier mobility degradation after the PIH process suggests that the bulk defects in SiO 2 are the major contributors rather than graphene/SiO 2 interface defects. (3) The dependence of the doping rate on the temperature and the laser power density matches a theoretical model based on the random hopping of H + . The results in this work are also valuable for the study of degradation of other oxide dielectric materials in various field-effect transistors.

show abstract

Section: Resultssupporting

confidence: 85%

Section: Resultsmentioning

confidence: 99%

“…It is in good agreement with the hydrogen concentration obtained by nuclear reaction analysis method. 26 The detailed calculations are discussed in the Supporting Information.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Photoinduced Hysteresis of Graphene Field-Effect Transistors Due to Hydrogen-Complexed Defects in Silicon Dioxide

Cao¹,

Liu²,

Zhang³

et al. 2019

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

show abstract

The Role of Hydrogen in ReRAM

Cox,

Sharpe,

McAleese

et al. 2024

Advanced Materials

View full text Add to dashboard Cite

Previous research on transistor gate oxides reveals a clear link between hydrogen content and oxide breakdown. This has implications for redox‐based resistive random access memory (ReRAM) devices, which exploit soft, reversible, dielectric breakdown, as hydrogen is often not considered in modeling or measured experimentally. Here quantitative measurements, corroborated across multiple techniques are reported, that reveal ReRAM devices, whether manufactured in a university setting or research foundry, contain concentrations of hydrogen at levels likely to impact resistance switching behavior. To the knowledge this is the first empirical measurement depth profiling hydrogen concentration through a ReRAM device. Applying a recently‐developed Secondary Ion Mass Spectrometry analysis technique enables to measure hydrogen diffusion across the interfaces of SiOx ReRAM devices as a result of operation. These techniques can be applied to a broad range of devices to further understand ReRAM operation. Careful control of temperatures, precursors, and exposure to ambient during fabrication should limit hydrogen concentration. Additionally, using thin oxynitride or TiO2 capping layers should prevent diffusion of hydrogen and other contaminants into devices during operation. Applying these principles to ReRAM devices will enable considerable, informed, improvements in performance.

show abstract

Different bound states of impurity hydrogen atoms in hydrothermally grown ZnO detected with nuclear reaction analysis

Shimizu

Wilde

Sato

2020

Nuclear Instruments and Methods in Physics Research Section B:

View full text Add to dashboard Cite

Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface

Cited by 11 publications

References 32 publications

Photoinduced Hysteresis of Graphene Field-Effect Transistors Due to Hydrogen-Complexed Defects in Silicon Dioxide

Photoinduced Hysteresis of Graphene Field-Effect Transistors Due to Hydrogen-Complexed Defects in Silicon Dioxide

The Role of Hydrogen in ReRAM

Different bound states of impurity hydrogen atoms in hydrothermally grown ZnO detected with nuclear reaction analysis

Contact Info

Product

Resources

About