Mechanism of impact ionization enhancement in GaAs p-i-n diodes under high illumination conditions

Articles you may be interested inGeneration-recombination and trap-assisted tunneling in long wavelength infrared minority electron unipolar photodetectors based on InAs/GaSb superlattice Appl. Phys. Lett.A type-II superlattice period with a modified InAs to GaSb thickness ratio for midwavelength infrared photodiode performance improvement Degradation in the pulsed responsivity of an In 0.53 Ga 0.47 As on InP p-i-n photodiode due to high-energy particle irradiation induced trapping and recombination centers is simulated using quasi-three-dimensional iterative solutions to the drift-diffusion and Poisson equation in the presence of generation-recombination terms. Device physics models necessary to simulate a realistic device are discussed, and the impulse response as a function of trap density is reported for defects uniformly distributed in the InGaAs region. At high trap densities, a sharp decrease in the pulsed responsivity and an increase in dark current can be correlated with the formation of a double-field profile similar to that observed in space charge sign inverted Si and GaAs particle detectors.

show abstract

Simulation studies of persistent photoconductivity and filamentary conduction in opposed contact semi-insulating GaAs high power switches

Joshi

Kayasit

Islam

et al. 1999

Journal of Applied Physics

View full text Add to dashboard Cite

A self-consistent, two-dimensional, time-dependent, drift-diffusion model is developed to simulate the response of high power photoconductive switches. Effects of spatial inhomogeneities associated with the contact barrier potential are incorporated and shown to foster filamentation. Results of the dark current match the available experiment data. Persistent photoconductivity is shown to arise at a high bias even under the conditions of spatial uniformity. Filamentary currents require an inherent spatial inhomogeneity, and are more likely to occur for low optical excitation. Under strong uniform illumination, the spatial nonuniformities were quenched as a result of a polarization-induced collapse in the internal fields. However, strong electric fields resulting at the contacts create a bipolar plasma, and hence, a virtual “double injection.”

show abstract

Mechanism of impact ionization enhancement in GaAs p-i-n diodes under high illumination conditions

Cited by 6 publications

References 7 publications

Distortion in Fiber Optic Links

Distortion in Fiber Optic Links

Simulation of impulse response degradation from irradiation induced trapping and recombination regions in an InGaAs on InP photodetector

Simulation studies of persistent photoconductivity and filamentary conduction in opposed contact semi-insulating GaAs high power switches

Contact Info

Product

Resources

About