Mechanism of low-temperature (≤300 °C) crystallization and amorphization for the amorphous Si layer on the crystalline Si substrate by high-energy heavy-ion beam irradiation

Nakata, Jyoji

doi:10.1103/physrevb.43.14643

Cited by 109 publications

(37 citation statements)

References 14 publications

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“…In fact, the typical number of vacancies to reach the a/c interface is (~10 15 cm -2 ) 10,11 , which help in enhancing the recrystallisation. Further, with the increasing number of the electron hole pairs, the neutral vacancies (activation energy for migration in c-Si (»0.33 eV) are expected to get converted to doubly negative vacancies (activation energy for migration in cSi (»0.18 eV) for dense electron hole pairs around them 5,19 . Therefore, more the number of vacancies are produced by the incident ions; more doubly negative vacancies are formed.…”

Section: Resultsmentioning

confidence: 99%

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Swift Heavy Ion Beam-induced Recrystallisation of Buried Silicon Nitride Layer

Som¹,

Sinha

Ghatak³

et al. 2009

DSJ

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Studies on MeV heavy ion beam-induced epitaxial crystallisation of a buried silicon nitride layer are reported. Transmission electron micrographs and selected area diffraction patterns have been used to study the recrystallisation of an ion beam-synthesised layer. Complete recrystallisation of the silicon nitride layer having good quality interfaces with the top-and the substrate-Si has been obsorved. Recrystallisation is achieved at significantly lower temperatures of 100 and 200 O C for oxygen and silver ions, respectively. The fact that recrystallisation is achieved at the lowest temperature for the oxygen ions is discussed on the basis of energy loss processes.

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Section: Resultsmentioning

confidence: 99%

“…Ion beam-induced epitaxial crystallisation (IBIEC) is a promising route to achieve solid phase epitaxial growth in silicon and other materials at considerably lower target temperatures [3][4][5][6][7][8][9] . IBIEC has advantages of low processing temperature and layer-by-layer crystallisation.…”

Section: Introductionmentioning

confidence: 99%

Swift Heavy Ion Beam-induced Recrystallisation of Buried Silicon Nitride Layer

Som¹,

Sinha

Ghatak³

et al. 2009

DSJ

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“…J. Nakata et al [5] have reported low temperature (120°C-300°C) recrystallization of amorphous silicon by high-energy ion beam. J. Nakata et al [6,7] have pointed out the possible role of inelastic scattering processes in ion beam induced epitaxial crystallization (IBIEC). In the present work, SIMNI (separation by implanted nitrogen) structures were synthesized by implantation of nitrogen ( 14 N + ) ion beam at 140 keV to high fluence of 5.0 × 10 17 cm − 2 into silicon substrate.…”

Section: Introductionmentioning

confidence: 99%

Effect of swift heavy ion (SHI) irradiation on nitrogen ion implanted silicon

Patel

Yadav

Dubey

et al. 2009

Surface and Coatings Technology

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“…Degree of crystallisation is studied by RBS channeling and TEM experiments. It has been shown that the swift heavy ion-induced epitaxial crystallisation can be achieved by irradiation at 300 °C to 400 °C 68,69 . It was concluded from several experiments at IUAC that swift heavy ion beam induced crystallisation strongly depends 70 on the the ratio of S e to S n of the ion beam used as shown in Fig.…”

Section: Ion Beam Induced Epitaxial Crystallisationmentioning

confidence: 99%

Modification and Characterisation of Materials by Swift Heavy Ions

Avasthi¹

2009

DSJ

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Swift heavy ions (SHI) available with 15 million Volt Pelletron accelerator at Inter University Accelerator Centre (IUAC) Delhi, formerly known as Nuclear Science Centre, (NSC), provide a unique opportunity to researchers for accelerator based materials science research. The major research areas can be broadly categorised as electronic sputtering, interface modifications, synthesis and modification of nanostructures, phase transitions and ion beam-induced epitaxial crystallisation. In, general, SHI irradiation based-materials may not be economically feasible, still it could be of interest for very specific cases in defence and space research. The paper gives a glimpse of the current research activities in materials science with SHIs, at IUAC.Keywords: Swift heavy ions, SHI, materials science, materials research systhesis of materials, characterisation of materials, nuclear energy loss, ion energy loss, electronic energy-loss-defects in materials, defect engineering INTRODUCTIONThe ions with energy ranging from a fraction of keV to GeV are useful in synthesis, modification and characterization of materials. The energetic ions during their passage through a material loose energy via two processes. These are nuclear energy loss S n and electronic energy loss S e . In the former process, the energy is lost by elastic collisions of incident ions with the atoms in the material, which is dominant at low energies. In the electronic energy loss process, dominant at high energies (>1 MeV/nucleon), the energy is lost by inelastic collisions of the ion with the atoms, leading to excitation or ionisation of the atoms. At these energies of heavy ions, the velocity of the ion is comparable to or higher than the velocity of Bohr electron. The ions with such high energies are also referred to as Swift Heavy Ions (SHI). The electronic energy loss for SHI is, generally, about two orders of magnitude higher than the nuclear energy loss1 . An interesting characteristic of the SHI is that it creates a columnar type of defect along its path (called as ion track), specially, in insulators. SHI during its passage through material can cause defect annealing, cluster of point defects and columnar type of defects depending on the mass and energy of the ion and the material. Therefore the SHI can be used for engineering the defects in the materials. The parameters of ion beam, which play crucial role in defect engineering, are the energy deposited per unit length and the fluence.The ion mass and its energy, decide the magnitudes of the electronic as well as nuclear energy losses. Especially for heavy ions at high energies (i.e., for SHI), the electronic energy loss decides the type of defects as the nuclear energy loss. The other ion beam parameter, fluence, dictates the number of defects (produced). The number of ion

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Mechanism of low-temperature (≤300 °C) crystallization and amorphization for the amorphous Si layer on the crystalline Si substrate by high-energy heavy-ion beam irradiation

Cited by 109 publications

References 14 publications

Swift Heavy Ion Beam-induced Recrystallisation of Buried Silicon Nitride Layer

Swift Heavy Ion Beam-induced Recrystallisation of Buried Silicon Nitride Layer

Effect of swift heavy ion (SHI) irradiation on nitrogen ion implanted silicon

Modification and Characterisation of Materials by Swift Heavy Ions

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