Mechanism of Nonuniform Damage Induced by Low-Energy Protons in GaAs MESFETs

Hou, Shuhao; Dong, Shangli; Yang, Jianqun; Guan, Enhao; Liu, Zhongli; Shao, Guojian; Zhang, Yubao; Li, Xingji

doi:10.1109/tns.2023.3332126

IEEE Trans. Nucl. Sci.

2023

DOI: 10.1109/tns.2023.3332126

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Mechanism of Nonuniform Damage Induced by Low-Energy Protons in GaAs MESFETs

Shuhao Hou,

Shangli Dong,

Jianqun Yang

et al.

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2024

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Cited by 2 publications

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Measuring the radiation hardness of terahertz devices for space applications

He,

Ma,

Yin

2024

Commun Phys

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The application of terahertz technology in space is frontier for the development of 6G technologies. Terahertz transceiver devices based on gallium arsenide Schottky barrier diodes (GaAs SBDs) have the characteristics of small size, light weight and low power consumption, making them suitable for application on spacecraft. However, there is currently a lack of experimental assessments on their space adaptability. Here, we study the radiation hardness of terahertz devices to determine their adaptability in complex space environments. We exposed GaAs SBDs and terahertz multipliers as typical terahertz devices to gamma rays and protons. The experimental results showed that the terahertz devices exhibited good tolerance to protons, but prolonged exposure to gamma rays could significantly increase the leakage current of the GaAs SBDs and alter its C-V characteristics, leading to the failure of the terahertz multiplier. Nevertheless, the terahertz devices maintained a good level of radiation hardness, making them highly suitable for use in Low Earth Orbit (LEO) satellites. The comparison between the results of proton and gamma ray tests indicated that the terahertz devices exhibited high inherent radiation hardness against displacement damage but were more sensitive to ionization damage, requiring higher shielding requirements.

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Measuring the radiation hardness of terahertz devices for space applications

He,

Ma,

Yin

2024

Commun Phys

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Proton Irradiation Effects on Dual Delta-Doped AlGaAs/InGaAs/AlGaAs Pseudomorphic High-Electron-Mobility Transistors

Hou,

Dong,

Yang

et al. 2024

IEEE Trans. Nucl. Sci.

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Mechanism of Nonuniform Damage Induced by Low-Energy Protons in GaAs MESFETs

Cited by 2 publications

References 48 publications

Measuring the radiation hardness of terahertz devices for space applications

Measuring the radiation hardness of terahertz devices for space applications

Proton Irradiation Effects on Dual Delta-Doped AlGaAs/InGaAs/AlGaAs Pseudomorphic High-Electron-Mobility Transistors

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