Mechanism of O2-anneal induced Vfb shifts of Ru gated stacks

Li, Z.; Schram, T.; Pantisano, L.; Stesmans, André; Conard, Thierry; Shamuilia, Sheron; Afanasiev, Valeri; Akheyar, A.; Elshocht, Sven Van; Brunco, D.P.; Deweerd, W.; Yoshioka, Naoki; Lehnen, P.; Gendt, Stefan De; Meyer, K. De

doi:10.1016/j.microrel.2007.01.054

Cited by 3 publications

(2 citation statements)

References 9 publications

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“…Second, they also produce electrical instabilities in MOS devices. Electrical instabilities have been the subject of numerous experimental studies [21][22][23][24][25][26][27], and it seems possible to interpret many of these as arising from the trapping of charge somewhere with in the gate stack. The SILC variation that we have observed in our study, can not be simply interpreted as a displacement current deriving from charging/discharging of oxide defects close to the interfaces [8].…”

Section: Introductionmentioning

confidence: 99%

Study of stress-induced leakage current (SILC) in HfO2/Dy2O3 high-κ gate stacks on germanium

Rahman¹,

Evangelou²,

Androulidakis³

2009

Microelectronics Reliability

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Section: Introductionmentioning

confidence: 99%

Study of stress-induced leakage current (SILC) in HfO2/Dy2O3 high-κ gate stacks on germanium

Rahman¹,

Evangelou²,

Androulidakis³

2009

Microelectronics Reliability

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“…Quite often accelerated life tests of MOS capacitors are performed by applying a high constant voltage at the gate contact (constant voltage stress: CVS) or by injecting a constant current across the oxide (constant current stress: CCS) over a period of time or during the tests of high temperature operating. They produce electrical instabilities which have been the subject of numerous experimental studies in MOS devices [8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Performance drifts of N-MOSFETs under pulsed RF life test

Belaïd¹,

Gares²,

Daoud³

et al. 2014

Microelectronics Reliability

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Material and electrical properties of HfxRuy and HfxRuyNz metals as gate electrodes for p-metal oxide semiconductor field effect transistor devices

Sawkar-Mathur

Chang

2008

Journal of Applied Physics

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Material and electrical characterizations of sputter-deposited HfxRuy and HfxRuyNz gate electrodes atop atomic layer deposited HfO2 were performed with a focus on optimizing their compositions for suitable applications in p-metal oxide semiconductor field effect transistors (pMOSFETs), since Fermi level pinning is a more severe issue for higher work function metals. The alloys of HfxRuy with effective work functions (EWFs) ranging from 4.4 to 5.0 eV were achieved when the Ru metal ratio was varied from 53% to 74%. Nitrided hafnium ruthenium alloys, HfxRuyNz (0%–25% N), with EWFs of 4.9–5.2 eV were also synthesized. Among these materials, Hf0.26Ru0.74 and Hf0.05Ru0.77N0.18 were determined to have EWFs adequate for pMOSFET devices of 5.0 and 5.2 eV, respectively. The slightly higher than expected EWFs of these metal gates are attributed to the presence of oxygen. The depth profiling of the as-deposited gate stacks showed reasonably sharp interfaces between the gate electrode and the gate dielectric with the HfxRuy alloy exhibiting better interfacial properties. Upon annealing, the HfxRuy alloys were found to be more stable than the HfxRuyNz alloys on HfO2.

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Mechanism of O2-anneal induced Vfb shifts of Ru gated stacks

Cited by 3 publications

References 9 publications

Study of stress-induced leakage current (SILC) in HfO2/Dy2O3 high-κ gate stacks on germanium

Study of stress-induced leakage current (SILC) in HfO2/Dy2O3 high-κ gate stacks on germanium

Performance drifts of N-MOSFETs under pulsed RF life test

Material and electrical properties of HfxRuy and HfxRuyNz metals as gate electrodes for p-metal oxide semiconductor field effect transistor devices

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