Mechanism of O3 and NO2 detection and selectivity of In2O3 sensors

Ivanovskaya, M. I.; Gurlo, Aleksander; Bogdanov, P

doi:10.1016/s0925-4005(01)00708-0

Cited by 195 publications

(96 citation statements)

References 6 publications

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“…In particular, the gas sensors have extensively applied Indium oxides due to its suitable performance in NO x detecting (B.-J. Kim, Song, & Kim, 2014), in addition to NH 3 (Qi et al, 2014), O3 (Ivanovskaya, Gurlo, & Bogdanov, 2001) and CO (H. Kim et al, 2015). In the last years the various morphologies and sizes of Indium oxide nanostructures have been developed, such as nanotubes (An et al, 2013a), Nano-towers (Comini, Galstyan, Faglia, Bontempi, & Sberveglieri, 2015), Nano-flowers (X.…”

Section: In 2 O 3 Gas Sensors For No X Detectingmentioning

confidence: 99%

The Review of Semiconductor Gas Sensor for Nox Detcting

Niyat¹,

Hadi²,

Abadi³

2016

TOJDAC

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During the last century, many semiconductor gas sensors have been presented based on various materials and technologies to detect gas components. Many of them are made to support human's life in different ways. In the last years, the number of sensors which can detect various gas species has increased dramatically especially with respect to global issues of environment and earth atmosphere, the necessity of those gas sensors which can detect air pollutants such as NO x gases in environment is felt. They are essentially required in order to control the systems of combustion exhausted from industry, stationary facilities and automobiles. So it is necessary for the scientists to design and fabricate the gas sensors which are of low cost, selective, sensitive, and accurate especially in low level concentrations of target gases, easy to process and of high recovery and response time, good electrical properties, and above all tunable structure at the nano scale. In this sense, this paper has presented various classifications of gas sensors and various semiconductor oxides for NO x detecting and their technology to convey a comprehensive idea about the semiconductor metals as well as metal oxides for NO x detecting along with their characteristics, structures etc. in order to clarify the future road map towards on the semiconductor materials for NO x detecting. Keywords: sensor, NO x gases, semiconductor, metal oxides INTRODUCTIONIn the last few decades, many studies have been focused on the semiconducting metal oxides which are known as effective gas sensing materials especially for NO x detecting due to their electrical conductivities which are open to change greatly with the changes of atmosphere (K. J. Choi & Jang, 2010;Comini et al., 2009;Fine, Cavanagh, Afonja, & Binions, 2010;Franke, Koplin, & Simon, 2006; Kanan, El-Kadri, Abu-Yousef, & Kanan, 2009; G Korotcenkov & Cho, 2011;J.-H. Lee, 2009;Tricoli, Righettoni, & Teleki, 2010;Wetchakun et al., 2011). The sensing characteristics of such sensors can be optimized by controlling their morphology, surface to volume ratio, and electrical properties. The developments in nanotechnology, fabrication methods, and synthesis provide a suitable atmosphere to construct those sensors with their mentioned sensing characteristics easier.

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Section: In 2 O 3 Gas Sensors For No X Detectingmentioning

confidence: 99%

The Review of Semiconductor Gas Sensor for Nox Detcting

Niyat¹,

Hadi²,

Abadi³

2016

TOJDAC

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“…In this frame, indium oxide (In2O3) has been described to be particularly sensitive towards ozone [6][7][8], even if its optimal response is generally observed in the range 200-350 °C [9]. Only few papers report a maximum response to ozone in temperature range below 100 °C [10,11], without a UV illumination.…”

Section: Introductionmentioning

confidence: 99%

WO3-Doped Indium Oxide Thick Films for Ozone Detection at Low Temperature

Ziegler

Marchisio

Palmero

et al. 2017

Proceedings of Eurosensors 2017, Paris, France, 3–6 September 2017

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Ozone, a strong oxidizing gas, has dramatically increased its concentration in the troposphere during the last decades. Since high O3 concentrations are hazardous to human health, the development of effective methods and economic devices to detect this gas is an urgent need. In this frame, In2O3 is well known as an n-type ozone sensitive and selective material, generally displaying its optimal sensing capability in the temperature range 200-350 °C. To enhance the sensing capability of In2O3 and to decrease its operative temperature, in this work, commercial In2O3 powders were doped with 2.5 wt. % WO3. Pure and doped-In2O3 materials were used to develop sensing devices by screen-printing technology. Resistance measurements were performed in the temperature range 25 °C-150 °C under 200-500 ppb O3. Best results were obtained at 75 °C with sensor's responses as high as 40 under 200 ppb of ozone.

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“…Indium oxide is not only known as a sensing material for resistive semiconducting gas sensors for the detection of NO 2 , O 3 , ethanol, hydrogen or CO (Ivanovskaya et al, 2001;Wagner et al, 2011Wagner et al, , 2013Takada et al, 1993;Zheng et al, 2009;Martin et al, 2004;Yamaura et al, 1996). Because of its optical properties it is also utilized for transparent conductors (typically doped with tin, ITO) for electronic components such as flat screen displays, solar cells and LEDs (Lewis and Paine, 2000;Kim et al, 1998).…”

Section: Introductionmentioning

confidence: 99%

High-temperature stable indium oxide photonic crystals: transducer material for optical and resistive gas sensing

Amrehn

Wagner

2016

J. Sens. Sens. Syst.

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Abstract. Indium oxide (In 2 O 3 ) inverse opal is a promising new transducer material for resistive and optical gas sensors. The periodically ordered and highly accessible pores of the inverse opal allow the design of resistive sensors with characteristics independent of structure limitations, such as diffusion effects or limited conductivity due to constricted crosslinking. Additionally the photonic properties caused by the inverse opal structure can be utilized to read out the sensors' electronical state by optical methods. Typically semiconducting sensors are operated at high temperatures (> 300 • C). To maintain a good thermal stability of the transducer material during operation is a minimum requirement. We present results on the synthesis and investigation of the structural stability of the In 2 O 3 inverse opal structure up to a temperature of 550 • C (limit of substrate material). As will be shown, their optical properties are maintained with only slight shifts of the photonic band gaps which can be explained by the results from the structural characterization using X-ray diffraction and electron microscopy combined with optical simulations.

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Mechanism of O3 and NO2 detection and selectivity of In2O3 sensors

Cited by 195 publications

References 6 publications

The Review of Semiconductor Gas Sensor for Nox Detcting

The Review of Semiconductor Gas Sensor for Nox Detcting

WO3-Doped Indium Oxide Thick Films for Ozone Detection at Low Temperature

High-temperature stable indium oxide photonic crystals: transducer material for optical and resistive gas sensing

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