Mechanism of photo induced mass transfer in amorphous chalcogenide films

Abstract

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Investigation of mechanical properties of the generated surface structures on a chalcogenide thin film with AFM

“…The excitation of electron-hole pairs, defect creation, bond braking and rearrangement always are present in these amorphous semiconductor materials under illumination with photons or electron beam. As a result of this, the sample possesses increased free volume [8] and plasticity [9] , which plays important role in the relatively small (about 0.5-1%) local expansion effect in irradiated spots, but also influences essentially larger local surface (thickness) changes due to the stimulated mass-transport in the gradient fIelds of excitation [7,9,10]. The elastic moduli were determined from the average of the fitted parameters.…”

Photo induced self-diffusion and viscosity in amorphous chalcogenide films

“…The PI self-diffusion coefficients, D, were measured in As 20 Se 80 films at room temperature at various light intensities. It was found that D linearly increased with the intensity, I, and the coefficient β=D/I was equal 2.5×10 −18 m 4 /J [22]. Later, the PI diffusion coefficients were quantitavely estimated by the kinetics of growth of surface relief gratings (SRGs) at 77 and 300 K [23] for the same film composition, and recently, the PI coefficients were measured [24] in these films in a wide temperature range (308-398 K) and light intensities (0-2.5 W/cm 2 ).…”

“…The first quantitative measurements of PI diffusion coefficients data were obtained using a method based on the theory of capillary flattening of solids [21], which was modified [22] by taking into account the final thickness of Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. the films.…”

“…The effective PI diffusion coefficients determined from the kinetics of mass transfer experiments can be written as [22]…”

Stimulated Surface Relief Erasing in Amorphous As‐Se Layers: Thermal‐ and Light Induced Effects

“…For diffusion mechanism , whereas for viscous flow and due to this difference, one can determine the flattening mechanism. Measurements of the flattening kinetics under band gap light illumination at room temperature for SRGs of various periods produced on the surface of As 20 Se 80 ACFs showed that the main mechanism is PI bulk diffusion.…”