2005
DOI: 10.1016/j.jcrysgro.2005.02.014
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Mechanism of preferential orientation in sputter deposited titanium nitride and yttria-stabilized zirconia layers

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Cited by 54 publications
(38 citation statements)
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“…The (100) planes are the cleavage planes of MgO, they are charge neutral and naturally occurring orientation, and have the lowest surface energy. Orientation attributed to surfaces (111) can be the fastest growing direction for a material with the NaCl structure (Mahieu et al 2005). At low pressures or vacuum, the growth seems to be kinetically limited and (111) oriented grains have the largest perpendicular growth rate over (100) oriented grains.…”
Section: Structural Study Of Mgo Thin Filmsmentioning
confidence: 99%
“…The (100) planes are the cleavage planes of MgO, they are charge neutral and naturally occurring orientation, and have the lowest surface energy. Orientation attributed to surfaces (111) can be the fastest growing direction for a material with the NaCl structure (Mahieu et al 2005). At low pressures or vacuum, the growth seems to be kinetically limited and (111) oriented grains have the largest perpendicular growth rate over (100) oriented grains.…”
Section: Structural Study Of Mgo Thin Filmsmentioning
confidence: 99%
“…The correlation between off-normal deposition from one source and biaxial alignment is well documented and understood for several materials. 16,19,20,[24][25][26][27] This is not the case when growing films from two material sources in a cosputtering arrangement.…”
mentioning
confidence: 99%
“…As described by Mahieu et al. [27,28] the fastest growing direction under these conditions is [220] which will result in <220> texture as seen in Fig. 1.a.…”
Section: Accepted M Manuscriptmentioning
confidence: 85%
“…1.c., a trend is seen as substrate bias is increased from -25 V to -75 V, the degree of <220> orientation increases as well. However, it is unlikely that increased bias would change the reactive oxygen from the molecular to the atomic state which promotes (220) texture as described by Mahieu et al [27,28]. However, it has previously been shown that ion bombardment promotes <111> or <220> texture or a mixture thereof as planes in all other directions have higher etch rates and are successfully eliminated by the shadowing process during the growth of the columns [30].…”
Section: Accepted M Manuscriptmentioning
confidence: 99%