Mechanism of radiation effects in floating gate ROMs

Abstract

Mechanism of irradiation effects is analyzed for floating gate read only memorie s (ROMs). Phenomena in experiments are reasonably explained. It is proposed that failures in devices result from oxide trapped charge and interface trapped char ge generated by radiation in memory cells and peripheral circuitry. The neutron, proton and 60Co γ irradiation effects in FLASH ROM and EEPROM a re total dose effects.

A facility for the study of Single Event Effects in the TANDAR accelerator

“…The handling of this condition is not easy if a stable, controlled beam is desired. Many laboratories have implemented different solutions to this problem, such as: the use of a dispersing foil just before the analyzing magnet or an Au foil for scattering in the measurement chamber and the sample set at an adequate angular position [6][7][8][9].…”