Mechanism of the Electrical Conduction in Li-Doped NiO

Bosman, A.J.; Crevecoeur, C.

doi:10.1103/physrev.144.763

Cited by 227 publications

(52 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Several efforts have been made to explain the insulating behavior of NiO. Appreciable conductivity can be achieved in NiO by creating Ni vacancies or substituting Li for Ni at Ni sites [6]. Hydrogen gas sensors based on electrostatically spray deposited NiO thin film was studied by Raied et.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Band Energy Outline of NiO:Au /Si Thin-Film for Solar Cell

2017

ijs

View full text Add to dashboard Cite

In this paper the effects of the contact material on the photovoltaic (PV) characteristics of p-NiO:Au/n-Si solar cells fabricated by using the pulsed laser deposition (PLD) technique had been studied. It shown the p-NiO:Au/n-Si could be successfully used to construct and improve the performance of solar cells by using Au. The conversion efficiency was increased comparable with p-NiO/n-Si solar cells. In this case the NiO:Au layer acts as a hole collector as well as a barrier for charge recombination.

show abstract

Section: Introductionmentioning

confidence: 99%

“…NiO is also a well-studied material as the positive electrode in batteries [5]. Pure stoichiometric NiO crystals are perfect insulators [6]. Several efforts have been made to explain the insulating behavior of NiO.…”

Section: Introductionmentioning

confidence: 99%

Band Energy Outline of NiO:Au /Si Thin-Film for Solar Cell

2017

ijs

View full text Add to dashboard Cite

show abstract

“…Several efforts have been made to explain the insulating behavior of NiO. Appreciable conductivity can be achieved in NiO by creating Ni vacancies or substituting Li for Ni at Ni sites [6]. Electrostatic spray deposition (ESD) is of particular interest because of its simplicity, low cost, and minimal waste production.…”

Section: Introductionmentioning

confidence: 99%

Hydrogen gas sensors based on electrostatically spray deposited nickel oxide thin film structures

et al. 2015

View full text Add to dashboard Cite

A simple, low-cost, and home-built electrostatic spray deposition (ESD) system with the stable cone-jet mode was used to deposit nickel oxide (NiO) thin films on glass substrates kept at temperature of 400 ℃ as the primary precursor solution of 0.1 M concentration hydrated nickel chloride was dissolved in isopropyl alcohol. Electrical measurements showed that these films were of n-type conductivity while their resistance response to hydrogen flow in air ambient was varied by 2.81% with the rise and recovery time of 48 s and 40 s, respectively.

show abstract

“…Studies on the influence of ions: M 3+ (Cr 2 O 3 ) [12,27,30,36,37,[52][53][54][55][56][57][58][59][60] and M + (Li 2 O) [6,7,40,52,53] have been performed. The obtained dependencies of the electrical conductivity on the oxygen pressure for doped oxides agree with the theoretical expectations.…”

Section: Introductionmentioning

confidence: 99%

“…The studies of optical and magnetical properties of pure and doped oxide [1][2][3][4][5][6][7][8][9][10][11][12][13] allowed for the determination of its electronic structure. Due to the low concentration of point defects, it is assumed that they form an ideal solution.…”

Section: Introductionmentioning

confidence: 99%

Point defect diagrams for pure and doped nickel oxide $$ {\hbox{N}}{{\hbox{i}}_{{1} - \delta }}{\hbox{O}} $$ in the temperature range of 1,173–1,673 K (II)

Stokłosa

2011

Ionics

View full text Add to dashboard Cite

The point defect diagrams in nickel oxide Ni 1Àd O, pure and doped with M 3+ and M + metal ions, taking into consideration all of the types of defects in the cation sublattice, are presented in this work. A new method was used for the calculations of the diagrams. This method is based on the derived relations between the standard Gibbs energies of the formation of nickel vacancies and the intrinsic ionic and electronic defects. It also uses the experimental values of the deviation from the stoichiometry. The calculations were performed using the results of studies obtained by many authors in the temperature range of 1,173-1,673 K.

show abstract

Mechanism of the Electrical Conduction in Li-Doped NiO

Cited by 227 publications

References 17 publications

Band Energy Outline of NiO:Au /Si Thin-Film for Solar Cell

Band Energy Outline of NiO:Au /Si Thin-Film for Solar Cell

Hydrogen gas sensors based on electrostatically spray deposited nickel oxide thin film structures

Point defect diagrams for pure and doped nickel oxide $$ {\hbox{N}}{{\hbox{i}}_{{1} - \delta }}{\hbox{O}} $$ in the temperature range of 1,173–1,673 K (II)

Contact Info

Product

Resources

About