“…23,24 The high-energy PLD technique is used to synthesize high melting-point materials, including ceramics and oxides, [25][26][27] while the low-energy PLD method is exploited for the preparation of low melting-point materials, such as post-transition metals. 23,24,[28][29][30] The synthesis of the Bi/Bi 2 O 3 heterojunction nanoparticles included two processes. First, the Bi nanoparticles were grown on the Si substrates at various substrate temperatures of 100, 125, 150, 175, 200, 225, and 250 °C, respectively.…”