Mechanism of the reduction of dislocation density in epilayers grown on compliant substrates

Abstract

GeSi films with reduced dislocation density grown by molecular-beam epitaxy on compliant substrates based on porous silicon A simplified model of the mechanism of dislocation reduction in epilayers grown on compliant substrates by molecular-beam epitaxy has been developed based on the dislocation theory and detailed experiments. Theoretical results calculated with this model indicate that up to 100-fold defect reduction can be achieved by using a silicon-on-insulator compliant substrate for the thick epilayer growth as compared to that of using a conventional Si substrate. The advantage of growing thick epilayers on compliant substrates can be predicted quantitatively. The mechanism of a nearly dislocation-free SiGe alloy, as well as GaAs epilayers grown on silicon-on-insulator compliant substrates, is explained and the dislocation density calculated with this model is in good agreement with our experimental results.

Compliant Substrates for Heteroepitaxial Semiconductor Devices: Theory, Experiment, and Current Directions

“…Pei et al 28 argued that the benefit of growing on an SOI wafer came from modified dislocation dynamics rather than true compliant substrate behavior. In order to address this question, Rehder et al 23 undertook a detailed experimental and modeling study of SiGe relaxation on silicon-on-insulator substrates.…”

Growth of strain relaxed Si1−yCy films using SOI substrates

“…The image force is attributed to the BOX layer with lower shear modules than Si substrate. Pei et al [14] also referred to image force downwards and proposed the equation about image force experienced by MDs. The equation was expressed as…”

Growth Analysis and Numerical Simulation of Cu3BiS3Absorbing Layer Solar Cell through the wxAMPS and Finite Element Method

“…This is emphasized that this length has been chosen by some authors as the Burgers vector [7]. Since the core radius is often greater than this length, it would be more appropriate to consider a distance from the power supply which dislocation formation, this length is taken such as 5b [4].…”