Mechanism of threshold switching in semiconducting glasses

Stocker, H. J.; Barlow, C. A.; Weirauch, D. F.

doi:10.1016/0022-3093(70)90088-8

Cited by 76 publications

(19 citation statements)

References 5 publications

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“…In some of the chalcogenides, such as Al-Te-Ge [34], Ge-Se-Tl films [18] etc., V T has been found to be proportional to thickness ''t". However, V T is found to be proportional to t 1/2 in certain memory switching glasses (Ge-Te [35], Ge-As-Te [36]). Earlier, It has been suggested that the switching voltage will vary as t, t 1/2 or t 2 , depending on whether the mechanism responsible for switching is purely electronic, purely thermal, or based on carrier injection [37].…”

Section: Thickness Dependence Of V Tmentioning

confidence: 96%

High field electrical switching behavior of Ge10Se90−xTlx glasses

Madhu

Jayanna

Asokan

2009

Journal of Non-Crystalline Solids

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Section: Thickness Dependence Of V Tmentioning

confidence: 96%

High field electrical switching behavior of Ge10Se90−xTlx glasses

Madhu

Jayanna

Asokan

2009

Journal of Non-Crystalline Solids

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“…Stocker et al 938 found a thickness-independent region in TeS A s 3 Gez o only up to about 0.5 p; the threshold field decreased with increasing thickness for thicker films. There are also several observations of hot filaments in the conducting state of particular compositions.…”

Section: Comparison Of Theory With Experimentsmentioning

confidence: 96%

Amorphous semiconductors

Adler

1971

C R C Critical Reviews in Solid State Sciences

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“…Generally, in memory switching glasses such as Ge-Te [26], Ge-As-Te [27], etc., V th has been found to be proportional to t 1/2 . In bulk Al-Te-Ge [28] and Ge-Se-Tl films [29], V th has been found to be proportional to the thickness "t".…”

Section: Thickness Dependence Of V Thmentioning

confidence: 99%

Electrical switching studies on Ge–Te–Tl chalcogenide glasses: Effect of thallium on the composition dependence of switching voltages

Rahman¹,

Rukmani²,

Asokan³

2011

Journal of Non-Crystalline Solids

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Bulk Ge 17 Te 83−x Tl x glasses (0 ≤ x ≤ 13), have been found to exhibit memory type electrical switching. The switching voltages (also known as threshold voltage -V th ) of Ge 17 Te 83−x Tl x glasses are found to decrease with increasing thallium content. The rate of decrease of V th is greater at lower concentrations and V th falls at a slower rate for higher thallium concentrations (x ≥ 6). The addition of thallium to the Ge-Te network fragments the covalent network and introduces ionic nature to it; the reduction in network connectivity leads to the decrease in switching voltages with thallium content. The decrease in the glass transition temperatures of Ge 17 Te 83−x Tl x glasses with increasing thallium concentration supports the idea of decrease in network connectivity with Tl addition. The more metallic nature of Tl also contributes to the observed reduction in the switching voltages of Ge 17 Te 83−x Tl x glasses with Tl content. Further, there is an interesting correlation seen between the threshold voltage V th and the average bond energy, as a function of Tl content. In addition, the switching voltages of Ge 17 Te 83−x Tl x glasses have been found to decrease with sample thickness almost linearly. The set-reset studies indicate that the Ge 17 Te 81 Tl 2 sample can be switched for more than 10 cycles, whereas other glasses could not be reset beyond two switching cycles.

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Mechanism of threshold switching in semiconducting glasses

Cited by 76 publications

References 5 publications

High field electrical switching behavior of Ge10Se90−xTlx glasses

High field electrical switching behavior of Ge10Se90−xTlx glasses

Amorphous semiconductors

Electrical switching studies on Ge–Te–Tl chalcogenide glasses: Effect of thallium on the composition dependence of switching voltages

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