1999
DOI: 10.1016/s1359-6454(99)00277-3
|View full text |Cite
|
Sign up to set email alerts
|

Mechanism of twinning-induced grain boundary engineering in low stacking-fault energy materials

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

8
146
0
1

Year Published

2005
2005
2017
2017

Publication Types

Select...
5
4
1

Relationship

0
10

Authors

Journals

citations
Cited by 377 publications
(155 citation statements)
references
References 18 publications
8
146
0
1
Order By: Relevance
“…1 These interfaces typically show lower grain boundary energies compared to those of low-CSL boundaries and HAGBs [15,16]. Coherent twin or Σ3 boundaries are the most prevalent type of special grain boundaries [17] and possess the lowest grain boundary energy [16]. Therefore, they are highly desirable features for breaking up the connectivity of the random grain boundary network.…”
Section: Introductionmentioning
confidence: 99%
“…1 These interfaces typically show lower grain boundary energies compared to those of low-CSL boundaries and HAGBs [15,16]. Coherent twin or Σ3 boundaries are the most prevalent type of special grain boundaries [17] and possess the lowest grain boundary energy [16]. Therefore, they are highly desirable features for breaking up the connectivity of the random grain boundary network.…”
Section: Introductionmentioning
confidence: 99%
“…of low-GBs is surprisingly high [7][8][9][10][11]. The number of low-GBs exceeds the theoretical value for a random polycrystal, derived by Mackenzie [12].…”
Section: Introductionmentioning
confidence: 99%
“…Σ3 + Σ3 = Σ9 [41]. With the onset of deformation at ε = 0.23, a reduction in the HAGB, THAGB, Σ3 and Σ9 fractions is seen; following which they all exhibit a gradual increase at higher strains (Fig.…”
Section: Microstructure Evolution With Dynamic Recrystallisationmentioning
confidence: 87%