Mechanism of vertical Ge nanowire nucleation on Si (111) during subeutectic annealing and growth

Abstract

Abstract

Recent advances in the growth of germanium nanowires: synthesis, growth dynamics and morphology control

“…199 The orientation of nanowires has been shown to be diameter dependent 200 and additionally, certain nanowire facets are more energetically favourable than others, thus an understanding of growth orientation and faceting is vital for growth engineering. One common method of controlling the orientation of Ge nanowires is through epitaxial growth from substrates such as GaAs (110), 92 Si(111) 201,202 and Ge (111). 202 The underlying substrate orientation guides the crystallographic growth direction of the nanowires due to lattice matching.…”

Catalyst–substrate interaction and growth delay in vapor–liquid–solid nanowire growth

“…It has been shown in many studies that the substrate significantly influences possible onedimensional growth utilizing VLS mechanism [8]. The choice of a substrate is crucial; the out-of-plane nanowire growth can change to in-plane (along the substrate) growth on a different substrate [9][10], or the nanowire growth can be hindered on some substrates [11].…”

Au–Ge MEAM potential fitted to the binary phase diagram

“…Additionally, the gold-catalyzed (Au-catalyzed) vapor-liquid-solid (VLS) growth, a common method for Ge NW synthesis, enables the fabrication of dense and aligned Ge NW array at low temperatures (<400 °C) [4][5][6]. Theoretical and experimental studies have been conducted to understand the mechanism of the VLS growth for the Au-Ge system, in order to achieve better nucleation control and avoid NW anomalies such as kinking and poor crystallographic misalignment during the VLS process [7][8][9]. Among the existing simulation methods, atomistic models, based on appropriate empirical interatomic potentials, have the ability to reveal the details of the nucleation and growth dynamics.…”