Mechanism of void formation in TiN/AlSiCu/TiN/plasma-enhanced tetraethyl orthosilicate SiO2 multi-layer structures via high-temperature stress migration

Naoe, Takuya; Endoh, Hirohiko; Fuchino, Fumihiro; Miyata, Masanori; Miyake, Hidetsugu; Takahashi, Takuya; Fujimoto, Takaaki

doi:10.1016/j.mssp.2018.04.013

Materials Science in Semiconductor Processing

2018

DOI: 10.1016/j.mssp.2018.04.013

|View full text |Cite

Mechanism of void formation in TiN/AlSiCu/TiN/plasma-enhanced tetraethyl orthosilicate SiO2 multi-layer structures via high-temperature stress migration

Takuya Naoe

Hirohiko Endoh

Fumihiro Fuchino

et al.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2020

2024

Publication Types

Select...

Article3

Relationship

Self Cite0

Independent3

Authors

Journals

Cited by 3 publications

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Mechanism of void formation in TiN/AlSiCu/TiN/plasma-enhanced tetraethyl orthosilicate SiO2 multi-layer structures via high-temperature stress migration

Cited by 3 publications

References 13 publications

In-situ revealing the degradation mechanisms of Pt film over 1000 °C

In-situ revealing the degradation mechanisms of Pt film over 1000 °C

Molecular dynamics-based analysis of the effect of voids and HCP-Phase inclusion on deformation of single-crystal CoCrFeMnNi high-entropy alloy

Effects and modulation mechanism of crystal structure on residual stress of Cu films used for metallization

Contact Info

Product

Resources

About