Mechanism of yellow luminescence in GaN

Suski, T.; Perlin, P.; Teisseyre, H.; Leszczyński, M.; Grzegory, I.; Jun, J.; Boćkowski, Michał; Porowski, S.; Moustakas, T. D.

doi:10.1063/1.115098

Cited by 214 publications

(101 citation statements)

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“…The results of the present work allude that this omnipresent native defect is very likely the nitrogen-antisite related defect, and it is the prominent native defect that controls the resistivity of unintentionally doped semi-insulating GaN, just like the EL2 defect ͑related to arsenic antisite͒ in unintentionally doped semi-insulating GaAs. Previous studies have also associated the nitrogen antisite defect ͑N Ga ͒ with deep states at 0.8-1.1 eV below the bottom of the conduction band, 47,48 which agrees well with the 1.0 eV activation energy found in our TDDC measurements of the semiinsulating materials.…”

Section: Interpretation Of Compensation Mechanismssupporting

confidence: 81%

Growth kinetics and electronic properties of unintentionally doped semi-insulating GaN on SiC and high-resistivity GaN on sapphire grown by ammonia molecular-beam epitaxy

Tang

Fang

Rolfe

et al. 2010

Journal of Applied Physics

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Growth kinetics and electronic properties of unintentionally doped semi-insulating GaN on SiC and high-resistivityGrowth of unintentionally doped ͑UID͒ semi-insulating GaN on SiC and highly resistive GaN on sapphire using the ammonia molecular-beam epitaxy technique is reported. The semi-insulating UID GaN on SiC shows room temperature ͑RT͒ resistivity of 10 11 ⍀ cm and well defined activation energy of 1.0 eV. The balance of compensation of unintentional donors and acceptors is such that the Fermi level is lowered to midgap, and controlled by a 1.0 eV deep level defect, which is thought to be related to the nitrogen antisite N Ga , similar to the "EL2" center ͑arsenic antisite͒ in unintentionally doped semi-insulating GaAs. The highly resistive GaN on sapphire shows RT resistivity in range of 10 6 -10 9 ⍀ cm and activation energy varying from 0.25 to 0.9 eV. In this case, the compensation of shallow donors is incomplete, and the Fermi level is controlled by levels shallower than the 1.0 eV deep centers. The growth mechanisms for the resistive UID GaN materials were investigated by experimental studies of the surface kinetics during growth. The required growth regime involves a moderate growth temperature range of 740-780°C, and a high ammonia flux ͑beam equivalent pressure of 1 ϫ 10 −4 Torr͒, which ensures supersaturated coverage of surface adsorption sites with NH x radicals. Such highly nitrogen rich growth conditions lead to two-dimensional layer by layer growth and reduced oxygen incorporation.

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Section: Interpretation Of Compensation Mechanismssupporting

confidence: 81%

Growth kinetics and electronic properties of unintentionally doped semi-insulating GaN on SiC and high-resistivity GaN on sapphire grown by ammonia molecular-beam epitaxy

Tang

Fang

Rolfe

et al. 2010

Journal of Applied Physics

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“…7 However, Perlin et al reported that the YL transition was more likely due to deep acceptor levels, though not necessarily carbon related. 8,9 The discrepancy between the two explanations was addressed by Polyakov et al who discussed the likelihood of two overlapping bands responsible for the YL in the context of PL measurements on AlGaN samples of varying composition. 10 Zhang a͒ Author to whom correspondence should be addressed; electronic mail: speck@mrl.ucsb.edu and Kuech then correlated YL to carbon concentration by intentionally doping halide vapor phase epitaxy ͑HVPE͒ grown GaN with propane.…”

Section: Introductionmentioning

confidence: 99%

Carbon doping of GaN with CBr4 in radio-frequency plasma-assisted molecular beam epitaxy

Green

Mishra

Speck

2004

Journal of Applied Physics

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Carbon tetrabromide (CBr 4 ) was studied as an intentional dopant during rf plasma molecular beam epitaxy of GaN. Secondary ion mass spectroscopy was used to quantify incorporation behavior. Carbon was found to readily incorporate under Ga-rich and N-rich growth conditions with no detectable bromine incorporation. The carbon incorporation ͓C͔ was found to be linearly related to the incident CBr 4 flux. Reflection high-energy electron diffraction, atomic force microscopy and x-ray diffraction were used to characterize the structural quality of the film's postgrowth. No deterioration of structural quality was observed for ͓C͔ from mid 10 17 to ϳ10 19 cm Ϫ3 . The growth rate was also unaffected by carbon doping with CBr 4 . The electrical and optical behavior of carbon doping was studied by co-doping carbon with silicon. Carbon was found to compensate the silicon although an exact compensation factor was difficult to extract from the data. Photoluminescence was performed to examine the optical performance of the films. Carbon doping was seen to monotonically decrease the band edge emission. Properties of carbon-doped GaN are interpreted to be consistent with recent theoretical work describing incorporation of carbon as function of Fermi level conditions during growth.

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“…11 One characteristic of GaN observed in photoluminescence ͑PL͒ spectra is yellow luminescence ͑YL͒. [12][13][14][15] Kim et al reported multiphotoninduced PL in the YL band and found that the multiphoton PL excitation ͑PLE͒ spectrum exhibits resonance that is attributable to the mid-gap defect states. 6 Sun et al obtained a large two-photon absorption ͑TPA͒ coefficient below the band gap and demonstrated two-photon-induced YL imaging.…”

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confidence: 99%

Two-photon absorption and multiphoton-induced photoluminescence of bulk GaN excited below the middle of the band gap

Toda

Matsubara

Morita

et al. 2003

Applied Physics Letters

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Optical nonlinearity in the yellow luminescence (YL) band of GaN was investigated using thick bulk samples. Transient pump–probe measurements revealed strong transmission changes due to two-photon absorption(TPA) even at the middle of the YL band. The TPA coefficient evaluated reaches ∼5 cm/GW∼5 cm/GW at about 1.3 eV, which was as large as the mid-gap resonance. The TPA spectrum clearly showed that the observed large nonlinearity originated from the YL band. On the basis of efficient TPA in the YL band, relaxation processes in the multiphoton-induced photoluminescence excitation spectrum were also investigated

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Mechanism of yellow luminescence in GaN

Cited by 214 publications

References 0 publications

Growth kinetics and electronic properties of unintentionally doped semi-insulating GaN on SiC and high-resistivity GaN on sapphire grown by ammonia molecular-beam epitaxy

Growth kinetics and electronic properties of unintentionally doped semi-insulating GaN on SiC and high-resistivity GaN on sapphire grown by ammonia molecular-beam epitaxy

Carbon doping of GaN with CBr4 in radio-frequency plasma-assisted molecular beam epitaxy

Two-photon absorption and multiphoton-induced photoluminescence of bulk GaN excited below the middle of the band gap

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