2014
DOI: 10.1016/j.cplett.2014.04.053
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Mechanism study of morphological evolution of Cu2FeSnSe4 nanoparticles synthesized with solvothermal method

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Cited by 17 publications
(8 citation statements)
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“…All these peaks are shifted from Raman peaks for CFTSe (209, 270 cm À1 ) or CFTS (321, 284, 218 cm À1 ) phases as expected. 7,8,[26][27][28] Band gap measurements of CZFTS for Zn-rich composition showed 1.72 eV whereas those with Fe-rich composition gave a band gap of 1.67 eV, which are close to those reported previously. 2,7 Raman spectra obtained for the Fe-rich CZFTSe films showed a broad peak with low intensity at 230 cm À1 .…”
Section: Raman Spectra and Uv-visible Spectrasupporting
confidence: 82%
See 1 more Smart Citation
“…All these peaks are shifted from Raman peaks for CFTSe (209, 270 cm À1 ) or CFTS (321, 284, 218 cm À1 ) phases as expected. 7,8,[26][27][28] Band gap measurements of CZFTS for Zn-rich composition showed 1.72 eV whereas those with Fe-rich composition gave a band gap of 1.67 eV, which are close to those reported previously. 2,7 Raman spectra obtained for the Fe-rich CZFTSe films showed a broad peak with low intensity at 230 cm À1 .…”
Section: Raman Spectra and Uv-visible Spectrasupporting
confidence: 82%
“…2,7 The calculated band gaps were 1.48 and 1.47 eV for Zn-rich and Fe-rich CZFTSe thin films respectively which are in the range of CZTS, CZTSe, CZTSSe and CFTSe. [27][28][29] UV/Vis Tauc plots drawn by ploting (ahn) 2 against hn gave a band gap values of B1.64 and 1.61 eV for Zn-rich and Fe-rich CZFTSSe thin films, which were closer to that of the Kesterite CZFTS phases. 2,[6][7][8][14][15][16][17][18][19][20] Electrical sheet resistance Variation in the electrical sheet resistance with different Fe-compositions has been studied.…”
Section: Raman Spectra and Uv-visible Spectramentioning
confidence: 76%
“…For the sake of alternative absorber layer, a member of Cu-based quaternary chalcogenide family Cu 2 FeSnS 4 (Se 4 ) (CFTS (Se)) [6] has been considered as a promising candidate due to earth abundant constituents and similar structural and optical properties to CZTSSe [2,4,7,8]. Recently, a number of researches have been carried out on CFTS (Se) materials and reported to have optical band gaps, 1.28-1.50 eV for CFTS [7][8][9][10][11][12][13][14][15][16] and 1.10-1.25 eV for CFTSe [17][18][19] suitable for absorber layer in photovoltaic application. The crystal structure of CFTS (Se) (stannite (ST), space group (I 2m)) is shown in Fig.…”
Section: Introductionmentioning
confidence: 99%
“…Meng et al [17] have fabricated CFTSe thin film from sputtered precursor followed by selenization. CFTSe sheet [18] and nanoparticles including nanoflowers and nanosheets [19] have been successfully synthesized by solvothermal method. Liu et al [21] have reported colloidal synthesis of CFTSe nanocrystal by a hot-injection approach.…”
Section: Introductionmentioning
confidence: 99%
“…3) which are in agreement with the reported peaks for CFTSe (209, 270 cm À1 ). 40,41 Optical and electrical properties of CFTS, CFTSe and CFTSSe thin films…”
Section: Morphology and Compositional Studies Of Thin Filmsmentioning
confidence: 99%