Mechanisms, design, and fabrication strategies for emerging electromagnetic wave-absorbing materials

Chen, Geng; Li, Zijing; Zhang, Limin; Chang, Qing; Chen, Xingjuan; Fan, Xiaomeng; Chen, Qiang; Wu, Hongjing

doi:10.1016/j.xcrp.2024.102097

Cell Reports Physical Science

2024

DOI: 10.1016/j.xcrp.2024.102097

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Mechanisms, design, and fabrication strategies for emerging electromagnetic wave-absorbing materials

Geng Chen,

Zijing Li,

Limin Zhang

et al.

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Cited by 23 publications

References 93 publications

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Electron Migratory Polarization of Interfacial Electric Fields Facilitates Efficient Microwave Absorption

Duan,

Zhou,

Yan

et al. 2024

Adv Funct Materials

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High‐performance microwave absorption materials (MAM) are often accompanied by synergistic effects of multiple loss mechanisms, but the contribution share of various loss mechanisms has been neglected to provide a template and reference for the design of MAM. Here, a highly conductive 2D structure is designed through a functional group‐induced structure modulation strategy, composite L‐Ni@C can reach an effective absorption bandwidth of 6.45 GHz at 15% fill rate, with a maximum absorption efficiency of 99.9999%. Through the layer‐by‐layer analysis of the loss mechanism, it is found that the strong loss originates from the polarization loss at the heterogeneous interface. The movement of space charge between the two‐phase interface forms an interfacial electric field, and the in situ doping of nitrogen is cleverly achieved by the introduction of amino functional groups, which significantly enhances the rate of space charge transfer between the two‐phase interface and greatly facilitates the electron migration polarization. The space charge motion law of the interfacial electric field is also simulated using COMSOL simulation software to illustrate the electron migration polarization mechanism at heterogeneous interfaces. This work fills the gap of functional group‐induced structural modulation and presents new theories into the mechanism of space charge movement at heterogeneous interfaces.

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Electron Migratory Polarization of Interfacial Electric Fields Facilitates Efficient Microwave Absorption

Duan,

Zhou,

Yan

et al. 2024

Adv Funct Materials

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Electrochemical Switching of Electromagnetism by Hierarchical Disorder Tailored Atomic Scale Polarization

Wu,

Yang,

Yang

et al. 2024

Advanced Materials

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High‐frequency electronic response governs a broad spectrum of electromagnetic applications from radiation protection, and signal compatibility, to energy recovery. Despite various efforts to manage electric conductivity, dynamic control over dielectric polarization for real‐time electromagnetic modulation remains a notable challenge. Herein, an electrochemical lithiation‐driven hierarchical disordering strategy is demonstrated for actively modulating electromagnetic properties. The controllable formation and diffusion of coherent interfaces and cation vacancies tailor the coupling of atomic electric field and thus the locally polarized domains, which leads to the reversible electromagnetic transparency/absorption switching with a tunable range of −0.8–−20.4 dB for the reflection loss and a broad operation bandwidth of 4.6 GHz. Compared to traditional methods of heteroatomic doping, hydrogenation, mechanical deformation, and phase transition, the electrochemical strategy shows a larger regulation scope of dielectric permittivity with the maximum increase ratios of 260% and 1950% for real and imaginary parts, respectively. This enables the construction of various device architectures including the adaptive window and pixelated metasurface. The results offer opportunities to achieve intelligent electromagnetic devices and pave an avenue to rejuvenate various electromagnetic functions of semiconductive oxides.

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Highly Mixed Index Facet Engineering Induces Defect Formation and Converts the Wave‐Transmissive Mott Insulator NiO into Electromagnetic Wave Absorbent

Hui,

Chen,

Tao

et al. 2024

Advanced Materials

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Mott insulator possesses the property of converting into semiconductor under supernormal conditions and achieving the Mott insulator‐semiconductor transition (IST) holds great scientific value. Nevertheless, current IST methodologies possess certain limitations because they are not capable of being implemented under conventional conditions, thereby limiting their practical applications. Herein, a highly mixed index facets (HMIF) strategy is proposed to construct homogeneous interfaces with gradient work function (WF) in Mott insulator NiO, accompanied by numerous oxygen vacancies. These vacancies provide additional defect energy levels and inhomogeneous charge distributions, resulting in a 180 fold enhancement of conductivity, realizing the IST process, and inducing the defect polarization. In addition, HMIF configuration induces electron transport along the index facets with gradient WF, ultimately leading to accumulation on the specific facet. This accumulation allows this facet can be considered as a dipole with its adjacent facets and makes NiO to attenuate electromagnetic waves (EMW) through dipole polarization. Therefore, NiO with exposed HMIF possesses improved EMW absorption properties (80‐fold higher than that of commercial NiO), realizing the transition from EMW‐transmissive to EMW‐absorbing materials. This research presents an approach for the IST process, discovers the polarization behavior that occurred on specific index facet, and extends its potential application in EMW absorption.

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Mechanisms, design, and fabrication strategies for emerging electromagnetic wave-absorbing materials

Cited by 23 publications

References 93 publications

Electron Migratory Polarization of Interfacial Electric Fields Facilitates Efficient Microwave Absorption

Electron Migratory Polarization of Interfacial Electric Fields Facilitates Efficient Microwave Absorption

Electrochemical Switching of Electromagnetism by Hierarchical Disorder Tailored Atomic Scale Polarization

Highly Mixed Index Facet Engineering Induces Defect Formation and Converts the Wave‐Transmissive Mott Insulator NiO into Electromagnetic Wave Absorbent

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